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Physica Status Solidi (B) Basic Research

Volumn 248, Issue 3, 2011, Pages 638-646

Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells

(5) Schade, L a,b Schwarz, U T a,b Wernicke, T c Weyers, M d Kneissl, M c,d

a UNIVERSITY OF FREIBURG (Germany)

b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF (Germany)

c TECHNISCHE UNIVERSITÄT BERLIN (Germany)

d LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK (Germany)

Author keywords

Band structure; InGaN; K p approximation; Photoluminescence; Polarization; Quantum wells

Indexed keywords

EID: 79951755721 PISSN: 03701972 EISSN: 15213951 Source Type: Journal
DOI: 10.1002/pssb.201046350 Document Type: Article

Times cited : (49)

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