Lasing and optical gain around 500 nm from optically pumped lasers grown on c-plane GaN substrates

Optics Letters

Volumn 34, Issue 3, 2009, Pages 328-330

  Sizov, Dmitry S ^a   Bhat, Rajaram ^a   Napierala, Jerome ^a   Xi, Jingqun ^a   Allen, Donald E ^a   Gallinat, Chad S ^a   Zah, Chung En ^a  

^a Corning Incorporated ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; OPTICAL GAIN; PUMPING (LASER); QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

FREESTANDING GAN SUBSTRATES; GAN SUBSTRATE; INGAN/GAN; LASING WAVELENGTH; VARIABLE STRIPE LENGTHS;

OPTICALLY PUMPED LASERS;

EID: 59249094926     PISSN: 01469592     EISSN: 15394794     Source Type: Journal    
DOI: 10.1364/OL.34.000328     Document Type: Article

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