High-power and long-lifetime InGaN blue-violet laser diodes grown by molecular beam epitaxy

Electronics Letters

Volumn 44, Issue 5, 2008, Pages 351-353

  Tan, W S ^a   Kauer, M ^a   Hooper, S E ^a   Barnes, J M ^a   Rossetti, M ^a   Smeeton, T M ^a   Bousquet, V ^a   Heffernan, J ^a  

^a SHARP LABORATORIES OF EUROPE LTD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THRESHOLD CURRENT DENSITY;

CONTINUOUS WAVE (CW) LIFETIME; STATISTICAL VARIATION;

QUANTUM WELL LASERS;

EID: 40149101151     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20083456     Document Type: Article

References (11)

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2. Rajan, S.: et al. ' Power performance of AlGaN/GaN HEMTs on SiC substrates grown by plasma-assisted MBE ', IEEE Electron Device Lett., 2004, 25, (5), p. 247 10.1109/LED.2004.826977 0741-3106
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4. Hooper, S.E.: et al. ' InGaN multiple quantum well laser diodes grown by molecular beam epitaxy ', Electron. Lett., 2004, 40, (1), p. 33-34 10.1049/el:20040015 0013-5194
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