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Journal of Applied Physics

Volumn 97, Issue 1, 2005, Pages

Growth modes in heteroepitaxy of InGaN on GaN

(4) Oliver, Rachel A a Kappers, Menno J a Humphreys, Colin J a Briggs, G Andrew D b

a New Museums Site ^* (United Kingdom)

b UNIVERSITY OF OXFORD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROEPITAXY; STRANSKI-KRASTANOV GROWTH; THREE-DIMENSIONAL (3D) GROWTH; THREE-DIMENSIONAL (3D) NANOSTRUCTURES;

ATOMIC FORCE MICROSCOPY; CHEMICAL REACTORS; GALLIUM NITRIDE; INDIUM; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NUCLEATION; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SURFACE CHEMISTRY; THREE DIMENSIONAL; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 19944431893 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1823581 Document Type: Article

Times cited : (107)

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