메뉴 건너뛰기




Volumn 109, Issue 3, 2011, Pages

Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates

Author keywords

[No Author keywords available]

Indexed keywords

GAN SUBSTRATE; GAN-BASED LASER DIODES; HETERO-INTERFACES; HETEROEPITAXIAL LAYERS; LAYER GROWTH; LIGHT EMITTING DEVICES; MISFIT DISLOCATIONS; QUANTUM WELL; SCATTERING CONTRAST; SEMIPOLAR; SLIP PLANE; THREADING DISLOCATION;

EID: 79951833035     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3531577     Document Type: Article
Times cited : (42)

References (23)
  • 1
    • 79951815948 scopus 로고    scopus 로고
    • Cree Inc, website
    • Cree Inc, website: http://www.cree.com/press/press-detail.asp?i= 1265232091259
  • 4
    • 0037442065 scopus 로고    scopus 로고
    • 0021-4922, 10.1143/JJAP.42.L170
    • S. -H. Park, Jpn. J. Appl. Phys., Part 2 0021-4922 42, L170 (2003). 10.1143/JJAP.42.L170
    • (2003) Jpn. J. Appl. Phys., Part 2 , vol.42 , pp. 170
    • Park, S.-H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.