High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes

Applied Physics Express

Volumn 3, Issue 8, 2010, Pages

  Lin, You Da ^a   Yamamoto, Shuichiro ^a,b   Huang, Chia Yen ^a   Hsiung, Chia Lin ^a   Wu, Feng ^a   Fujito, Kenji ^c   Ohta, Hiroaki ^a   Speck, James S ^a   Denbaars, Steven P ^a   Nakamura, Shuji ^a  

^a University of California   (United States)

^b SHARP CORPORATION   (Japan)

^c MITSUBISHI CHEMICAL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ALGAN; GAN SUBSTRATE; GREEN LASER; GREEN LIGHT EMITTING DIODES; GUIDING LAYER; HIGH QUALITY; INTERNAL QUANTUM EFFICIENCY; LASER DIODES; LASING WAVELENGTH; MULTIPLE QUANTUM WELLS; SEMIPOLAR;

DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; QUANTUM WELL LASERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77955504348     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.082001     Document Type: Article

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