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Volumn 6133, Issue , 2006, Pages

High-power and wide wavelength range GaN-based laser diodes

Author keywords

Blue LDs; High power lasers; InGaN; N type GaN substrate; Ultraviolet

Indexed keywords

GALLIUM NITRIDE; HIGH POWER LASERS; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; ULTRAVIOLET RADIATION;

EID: 33646731134     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.641460     Document Type: Conference Paper
Times cited : (78)

References (10)
  • 2
    • 0031187047 scopus 로고    scopus 로고
    • Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy
    • A. Usui, H. Sunakawa, A. Sakai, and A. Yamaguchi, "Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy," Jpn. J. Appl. Phys., vol. 36, pp. L899-L902, 1997.
    • (1997) Jpn. J. Appl. Phys. , vol.36
    • Usui, A.1    Sunakawa, H.2    Sakai, A.3    Yamaguchi, A.4
  • 3
    • 0001466566 scopus 로고    scopus 로고
    • Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
    • O. H. Nam, M. D. Bremser, T. Zheleva, and R. F. Davis, "Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy," Appl. Phys. Lett., vol. 71, pp. 2638-2340, 1997.
    • (1997) Appl. Phys. Lett. , vol.71 , pp. 2638-12340
    • Nam, O.H.1    Bremser, M.D.2    Zheleva, T.3    Davis, R.F.4
  • 9
    • 0035328412 scopus 로고    scopus 로고
    • Wavelength dependence of InGaN laser diode characteristics
    • S. Nagahama, T. Yanamoto, M. Sano and T. Mukai, "Wavelength Dependence of InGaN Laser Diode Characteristics", Jpn. J. Appl. Phys., vol. 40, pp 3075-3081, 2001.
    • (2001) Jpn. J. Appl. Phys. , vol.40 , pp. 3075-3081
    • Nagahama, S.1    Yanamoto, T.2    Sano, M.3    Mukai, T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.