Recent achievements in AMMONO-bulk method

Journal of Crystal Growth

Volumn 312, Issue 18, 2010, Pages 2499-2502

  Dwiliski, R ^a   Doradziski, R ^a   Garczyski, J ^a   Sierzputowski, L ^a   Kucharski, R ^a   Zajc, M ^a   Rudziski, M ^b   Kudrawiec, R ^c   Seraficzuk, J ^c   Strupiski, W ^b  

^a AMMONO Sp Zoo   (Poland)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^c WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

A2. Growth from solutions; A2. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

A2. METALORGANIC VAPOR PHASE EPITAXY; AMMONOTHERMAL METHOD; CRYSTALLINITIES; CUT OUT; EXCITON LINES; GAN CRYSTALS; GAN EPILAYERS; GAN SUBSTRATE; GROWTH FROM SOLUTION; HEXAGONAL SYMMETRY; HIGH QUALITY; INSULATING PROPERTIES; METAL-ORGANIC VAPOR PHASE EPITAXY; NON-POLAR; OPTICAL SELECTION RULES; P-TYPE CONDUCTIVITY; SEMI CONDUCTING III-V MATERIALS; SEMI-INSULATING; X RAY ROCKING CURVE;

CRYSTAL GROWTH; GALLIUM NITRIDE; HOLE CONCENTRATION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; VAPORS;

GALLIUM ALLOYS;

EID: 77955413489     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.04.001     Document Type: Conference Paper

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