Using the kinetic Wulff plot to design and control nonpolar and semipolar GaN heteroepitaxy

Semiconductor Science and Technology

Volumn 27, Issue 2, 2012, Pages

  Leung, Benjamin ^a   Sun, Qian ^a   Yerino, Christopher D ^a   Han, Jung ^a   Coltrin, Michael E ^b  

^a Yale University   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN AND CONTROL; FACETED GROWTH; FOREIGN SUBSTRATES; GROWTH METHOD; INTRINSIC PROPERTY; MICROSTRUCTURAL DEFECTS; MORPHOLOGICAL EVOLUTION; NON-POLAR; NON-POLAR GAN; RATIONAL MODELS; SAPPHIRE SUBSTRATES; SELECTIVE AREA GROWTH; SEMIPOLAR; STATUS AND OUTLOOK; WULFF PLOTS;

COALESCENCE; DESIGN; EPITAXIAL GROWTH; SAPPHIRE; STACKING FAULTS;

GALLIUM NITRIDE;

EID: 84856108800     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/2/024005     Document Type: Article

References (76)

1. Shen Y C, Mueller G O, Watanabe S, Gardner N F, Munkholm A and Krames M R 2007 Appl. Phys. Lett. 91 141101
2. Kim M H, Schubert M F, Dai Q, Kim J K, Schubert E F, Piprek J and Park Y 2007 Appl. Phys. Lett. 91 183507
3. Krames M R, Shchekin O B, Mueller-Mach R, Mueller G O, Zhou L, Harbers G and Craford M G 2007 J. Disp. Technol. 3 160
4. Takeuchi T, Amano H and Akasaki I 2000 Japan. J. Appl. Phys. 1 39 413
5. Romanov A E, Baker T J, Nakamura S and Speck J S 2006 J. Appl. Phys. 100 023522
6. Shen H, Wraback M, Zhong H, Tyagi A, DenBaars S P, Nakamura S and Speck J S 2009 Appl. Phys. Lett. 95 033503
7. Enya Y et al 2009 Appl. Phys. Express 2 082101
8. Sato H, Hirasawa H, Asamizu H, Fellows N, Tyagi A, Saito M, Fujito K, Speck J S, DenBaars S P and Nakamura A 2008 J. Light Vis. Environ. 32 107
9. Zhao Y, Tanaka S, Pan C-C, Fujito K, Feezell D, Speck J S, DenBaars S P and Nakamura S 2011 Appl. Phys. Express 4 082104
10. Speck J S and Chichibu S F 2009 MRS Bull. 34 304
11. Fujito K, Kubo S and Fujimura I 2009 MRS Bull. 34 313
12. Paskova T 2008 Phys. Status Solidi B 245 1011
13. Venables J A, Bennett P A, Brune H, Drucker J and Harding J H 2003 Phil. Trans. R. Soc. A 361 31129
14. van der Eerden J P, Bennema P and Cherepanova T A 1978 Prog. Cryst. Growth Charact. 1 21954
15. Ratsch C, Gyure M F, Caflisch R E, Gibou F, Petersen M, Kang M, Garcia J and Vvedensky D D 2002 Phys. Rev. B 65 195403
16. Swartzentruber B S 1996 Phys. Rev. Lett. 76 459
17. Tsong T T 1990 Atom-probe Field Ion Microscopy: Field Ion Emission and Surfaces and Interfaces at Atomic Resolution (Cambridge: Cambridge University Press)
18. Bauer E 1994 Rep. Prog. Phys. 57 895
19. Lorenz K, Gonsalves M, Kim W, Narayanan V and Mahajan S 2000 Appl. Phys. Lett. 77 3391
20. Sun Q, Yerino C D, Leung B, Han J and Coltrin M E 2011 J. Appl. Phys. 110 053517
21. Wulff G 1901 Z. Krystallogr. Mineral. 34 449
22. Herring C 1951 Phys. Rev. 82 87
23. Du D X, Srolovitz D J, Coltrin M E and Mitchell C C 2005 Phys. Rev. Lett. 95 155503
24. Sun Q, Yerino C D, Ko T S, Cho Y S, Lee I-H, Han J and Coltrin M E 2008 J. Appl. Phys. 104 093523
25. Hiramatsu K, Nishiyama K, Motogaito A, Miyake A, Iyechika Y and Maeda T 1999 Phys. Status Solidi A 176 535
26. Ohta H and Okamoto K 2009 MRS Bull. 34 324
27. Feezell D F, Schmidt M C, DenBaars S P and Nakamura S 2009 MRS Bull. 34 318
28. Koleske D D, Fischer A J, Allerman A A, Mitchell C C, Cross K C, Kurtz S R, Figiel J J, Fullmer K W and Breiland W G 2002 Appl. Phys. Lett. 81 19402
29. Fujikura H, Iizuka K and Tanaka S 2003 Japan. J. Appl. Phys. 1 42 276772
30. Kim S, Oh J, Kang J, Kim D, Won J, Kim J W and Cho H-K 2004 J. Cryst. Growth 262 713
31. Li S, Su J, Fan G, Zhang Y, Zheng S, Sun H and Cao J 2008 J. Cryst. Growth 310 37225
32. Ni X, Fu Y, Moon Y T, Biyikli N and Morko H 2006 J. Cryst. Growth 290 166
33. Sun Q, Kwon S-Y, Ren Z Y, Han J, Onuma T, Chichibu S F and Wang S 2008 Appl. Phys. Lett. 92 051112
34. Sun Q, Yerino C D, Zhang Y, Cho Y S, Kwon S-Y, Kong B H, Cho H K, Lee I-H and Han J 2009 J. Cryst. Growth 311 3824
35. Hollander J L, Kappers M J, McAleese C and Humphreys C J 2008 Appl. Phys. Lett. 92 101104
36. Johnston C F, Kappers M J and Humphreys C J 2009 J. Appl. Phys. 105 073102
37. Sun Q, Kong B H, Yerino C D, Ko T-S, Leung B, Cho H K and Han J 2009 J. Appl. Phys. 106 123519
38. Lymperakis L and Neugebauer J 2009 Phys. Rev. B 79 241308
39. Wang H, Chen C, Gong Z, Zhang J, Gaevski M, Su M, Yang J and Khan A 2003 Appl. Phys. Lett. 84 499
40. Hirai A, Haskell B A, McLaurin M B, Wu F, Schmidt M C, Kim K C, Baker T J, DenBaars S P, Nakamura S and Speck J S 2007 Appl. Phys. Lett. 90 121119
41. Fujan K J et al 2010 Appl. Phys. Lett. 97 101904
42. Sun Q, Ko T S, Yerino C D, Zhang Y, Lee I-H, Han J, Lu T-C, Kuo H-C and Wang S-C 2009 Japan. J. Appl. Phys. 48 071002
43. Sun Q, Leung B, Yerino C D, Zhang Y and Han J 2009 Appl. Phys. Lett. 95 231904
44. Venńgùs P, Bougrioua Z and Guehne T 2007 Japan. J. Appl. Phys. 46 4089
45. Baker T J, Haskell B A, Wu F, Fini P T, Speck J S and Nakamura S 2005 Japan. J. Appl. Phys. 44 L920
46. Venńgùs P, Zhu T, Martin D and Grandjean N 2010 J. Appl. Phys. 108 113521
47. Baker T J, Haskell B A, Wu F, Speck J S and Nakamura S 2006 Japan. J. Appl. Phys. 45 L154
48. Wernicke T, Netzel C, Weyers M and Kneissl M 2008 Phys. Status Solidi c 5 1815
49. Guhne T, Bougrioua Z, Vennegues P, Leroux M and Albrecht M 2007 J. Appl. Phys. 101 113101
50. Haskell B A, Wu F, Craven M D, Matsuda S, Fini P T, Fujii T, Fujito K, DenBaars S P, Speck J S and Nakamura S 2003 Appl. Phys. Lett. 83 644
51. Haskell B A, Baker T J, McLaurin M B, Wu F, Fini P T, DenBaars S P, Speck J S and Nakamura S 2005 Appl. Phys. Lett. 86 111917
52. Okada N, Kawashima Y and Tadatomo K 2008 Appl. Phys. Express 1 111101
53. Okuno K, Saito Y, Boyama S, Nakada N, Nitta S, Tohmon R G, Ushida Y and Shibata N 2009 Appl. Phys. Express 2 031002
54. Saito Y, Okuno K, Boyama S, Nakada N, Nitta S, Ushida Y and Shibata N 2009 Appl. Phys. Express 2 041001
55. Okada N, Kurisu A, Murakami K and Tadatomo K 2009 Appl. Phys. Express 2 091001
56. de Mierry P, Kriouche N, Nemoz M, Chenot S and Nataf G 2010 Appl. Phys. Lett. 96 231918
57. Honda Y, Kameshiro N, Yamaguchi M and Sawaki N J. Cryst. Growth 242 82
58. Hikosaka T, Tanikawa T, Honda Y, Yamaguchi M and Sawaki N 2008 Phys. Status Solidi c 5 2234
59. Sawaki N, Hikosaka T, Koide N, Tanaka S, Honda Y and Yamaguchi M 2009 J. Cryst. Growth 311 2867
60. Yang M, Ahn H S, Tanikawa T, Honda Y, Yamaguchi M and Sawaki N 2009 J. Cryst. Growth 311 2914
61. Tanikawa T, Rudolph D, Hikosaka T, Honda Y, Yamaguchi M and Sawaki N 2008 J. Cryst. Growth 310 4999
62. Sawaki N 2009 Proc. SPIE 7279 727902
63. Mierry P D, Kriouche N, Nemoz M and Nataf G 2009 Appl. Phys. Lett. 94 191903
64. Leung B, Zhang Y, Yerino C D, Sun Q, Chen Z, Lester S, Liao K-Y, Li Y-L and Han J 2011 Semicond. Sci. Technol. 27 024016
65. Craven M D, Lim S H, Wu F, Speck J S and DenBaars S P 2002 Appl. Phys. Lett. 81 469
66. Chakraborty A, Haskell B A, Keller S, Speck J S, Denbaars S P, Nakamura S and Mishra U 2005 Japan. J. Appl. Phys. 44 L173
67. Chakraborty A, Kim K C, Wu F, Speck J S, DenBaars S P and Mishra U 2006 Appl. Phys. Lett. 89 041903
68. Johnston C F, Kappers M J, Barnard J S and Humphreys C J 2008 Phys. Status Solidi c 5 1786
69. Paskova T, Kroeger R, Hommel D, Paskov P P, Monemar B, Preble E, Hanser A, Williams N M and Tutor M 2007 Phys. Status Solidi c 4 2536
70. Paskov P P, Monemar B, Iida D, Kawashima T, Iwaya M, Kamiyama S, Amano H and Akasaki I 2008 Phys. Status Solidi c 5 1768
71. Chichibu S F, Yamaguchi H, Zhao L, Kubota M, Okamoto K and Ohta H 2008 Appl. Phys. Lett. 92 091912
72. Johnston C F, Moram M A, Kappers M J and Humphreys C J 2009 Appl. Phys. Lett. 94 161109
73. Johnston C F, Kappers M J, Moram M A, Hollander J L and Humphreys C J 2009 J. Cryst. Growth 311 3295
74. Dong Y et al 2011 J. Appl. Phys. 109 043103
75. Venńgùs P, Mathal F and Bougrioua 2006 Phys. Status Solidi c 3 1658
76. Kim K-C, Schmidt M C, Wu F, McLaurin M B, Hirai A, Nakamura S, DenBaars S P and Speck J S 2008 Appl. Phys. Lett. 93 142108