Influence of growth rate in the early stage of high temperature GaN layer growth on quality of GaN films

Journal of Crystal Growth

Volumn 310, Issue 16, 2008, Pages 3722-3725

  Li, Shuti ^a   Su, Jun ^a   Fan, Guanghan ^a   Zhang, Yong ^a   Zheng, Shuwen ^a   Sun, Huiqing ^a   Cao, Jianxing ^a  

^a SOUTH CHINA NORMAL UNIVERSITY   (China)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ECOLOGY; GALLIUM NITRIDE; GROWTH RATE; MICROSCOPIC EXAMINATION; SCANNING PROBE MICROSCOPY; SEMICONDUCTING GALLIUM; STAGES; STEEL ANALYSIS; X RAY DIFFRACTION ANALYSIS;

(PL) PROPERTIES; ATOMIC FORCE (AF); DOUBLE CRYSTAL X RAY DIFFRACTION (DC XRD); ELSEVIER (CO); GAN FILMS; GAN GROWTH; GAN LAYERS; HIGH TEMPERATURE (HT); LAYER GROWTH;

GALLIUM ALLOYS;

EID: 48049124546     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.05.055     Document Type: Article

References (16)

1. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Sugimoto Y., and Kiyoku H. Appl. Phys. Lett. 70 (1997) 1417
2. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Kiyoku H., and Sugimoto Y. Jpn. J. Appl. Phys. 35 (1996) L74
3. Akasaki I., Amano H., Koide Y., Hiramatsu K., and Sawaki N. J. Crystal Growth 98 (1989) 209
4. Iwata K., Asahi H., Yu S.J., Asami K., Fukita H., Fushida M., and Gonda S. Jpn. J. Appl. Phys. 35 (1996) L289
5. Kikuchi A., Hoshi H., and Kishino K. Jpn. J. Appl. Phys. 34 (1995) 1153
6. Kikuchi A., Horino K., Domen K., Shinohara K., and Tanahashi T. Appl. Phys. Lett. 67 (1995) 2522
7. Koleske D.D., Coltrin M.E., and Russell M.J. J. Crystal Growth 279 (2005) 37
8. Ito T., Sumiya M., Takano Y., Ohtsuka K., and Fuke S. Jpn. J. Appl. Phys. Part 1 38 (1999) 649
9. Yi M.S., Lee H.H., Kim D.J., Park S.K., Noh D.Y., Kim C.C., and Je J.H. Appl. Phys. Lett. 75 (1999) 2187
10. Yang T., Uchida K., Mishima T., Kasai J., and Gotoh J. Phys. Status Solidi A 180 (2000) 45
11. Chen J., Zhang S.M., Zhang B.S., Zhu J.J., Shen X.M., Feng G., Liu J.P., Wang Y.T., Yang H., and Zheng W.C. J. Crystal Growth 256 (2003) 248
12. Kuznia J.N., Asif Khan M., Olson D.T., Kaplan R., and Freitas J. J. Appl. Phys. 73 (1993) 4700
13. Paskova T., Goldys E.M., Yakimova R., Svedberg E.B., Henry A., and Monemar B. J. Crystal Growth 208 (2000) 18
14. Figge S., Bottcher T., Einfeldt S., and Hommel D. J. Crystal Growth 221 (2000) 262
15. Kim S., Oh J., Kang J., Kim D., Won J., Kim J.W., and Cho H.K. J. Crystal Growth 262 (2004) 7
16. Ning X.J., Chien F.R., Pirouz P., Yang J.W., and Khan M.A. J. Mater. Res. 11 (1996) 580