Improvements in a -plane GaN crystal quality by a two-step growth process

Applied Physics Letters

Volumn 92, Issue 10, 2008, Pages

  Hollander, J L ^a   Kappers, M J ^a   McAleese, C ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM; SURFACE ROUGHNESS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CRYSTAL QUALITY; ISOTROPIC BEHAVIOR;

CRYSTAL GROWTH;

EID: 40849118521     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2830023     Document Type: Article

References (14)

1. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Nature (London) NATUAS 0028-0836 10.1038/35022529 406, 865 (2000).
2. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.96549 48, 353 (1986).
3. D. Kapolnek, X. H. Wu, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.114486 67, 1541 (1995).
4. P. Venńgùs, B. Beaumont, S. Haffouz, M. Vaille, and P. Gibart, J. Cryst. Growth JCRGAE 0022-0248 10.1016/S0022-0248(97)00875-0 187, 167 (1998).
5. E. Frayssinet, B. Beaumont, J. P. Faurie, P. Gibart, Zs. Makkai, B. Ṕcz, P. Lefebvre, and P. Valvin, MRS Internet J. Nitride Semicond. Res. MIJNF7 1092-5783 7, 8 (2002).
6. S. Figge, T. Bottcher, S. Einfeldt, and D. Hommel, J. Cryst. Growth JCRGAE 0022-0248 10.1016/S0022-0248(00)00696-5 221, 262 (2000).
7. D. D. Koleske, A. J. Fischer, A. A. Allerman, C. C. Mitchell, K. C. Cross, S. R. Kurtz, J. J. Figiel, K. W. Fullmer, and W. G. Breiland, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1506793 81, 1940 (2002).
8. R. Datta, M. J. Kappers, M. E. Vickers, J. S. Barnard, and C. J. Humphreys, Superlattices Microstruct. SUMIEK 0749-6036 10.1016/j.spmi.2004.09. 003 36, 393 (2004).
9. H. Lar̀che, P. Venńgùs, B. Beaumont, and P. Gibart, J. Cryst. Growth JCRGAE 0022-0248 10.1016/S0022-0248(99)00299-7 205, 245 (1999).
10. S. Tanaka, M. Takeuchi, and Y. Aoyagi, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 10.1143/JJAP.39.L831 39, L831 (2000).
11. K. Pakua, R. Boek, J. M. Baranowski, J. Jasinski, and Z. Liliental-Weber, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro.2004.03.020 267, 1 (2004).
12. M. J. Kappers, R. Datta, R. A. Oliver, F. D. G. Rayment, M. E. Vickers, and C. J. Humphreys, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro.2006. 10.205 300, 70 (2007).
13. M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1493220 81, 469 (2002).
14. A. Chakraborty, K. C. Kim, F. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2234841 89, 041903 (2006).