Status and future of high-power light-emitting diodes for solid-state lighting

IEEE/OSA Journal of Display Technology

Volumn 3, Issue 2, 2007, Pages 160-175

  Krames, Michael R ^a,b   Shchekin, Oleg B ^b   Mueller Mach, Regina ^b   Mueller, Gerd O ^b   Zhou, Ling ^b   Harbers, Gerard ^b   Craford, M George ^a,b  

^a IEEE   (United States)

^b Philips Lumileds Lighting Company   (United States)

Author keywords

Light sources; Light emitting diodes (LEDs); Nitrogen compounds; Phosphors; Phosphorus compounds; Semiconductor devices

Indexed keywords

HIGH LUMINANCE DEVICES; LIGHT EXTRACTION; SOLID STATE LIGHTING;

CHIP SCALE PACKAGES; ELECTRIC CURRENTS; LIGHTING; NITROGEN COMPOUNDS; PHOSPHORS; PHOSPHORUS COMPOUNDS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

LIGHT EMITTING DIODES;

EID: 34249332414     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2007.895339     Document Type: Article

References (64)

1. N. Holonyak, Jr., "Is the light emitting diode (LED) an ultimate lamp?," Am. J. Phys., vol. 68, pp. 864-866, 2000.
2. M. G. Craford, N. Holonyak, Jr., and F. A. Kish, Jr., "In pursuit of the ultimate lamp," Scientific Amer., pp. 83-88, Feb. 2001.
3. I. Vurgaftman and J. R. Meyer, "Band parameters for III-V compound semiconductors and their alloys," J. Appl. Phys., vol. 89, pp. 5815-5875, 2001.
4. K. M. Yu et al., "On the crystalline structure, stoichiometry and band gap of InN thin films," Appl. Phys. Lett., vol. 86, p. 071910, 2005.
5. C. P. Kuo et al., "High performance AlGaInP visible light-emitting diodes," Appl. Phys. Lett., vol. 57, pp. 2937-2939, 1990.
6. H. Sugawara, M. Ishikawa, and G. Hatakoshi, "High-efficiency InGaAlP/GaAs visible light-emitting diodes," Appl. Phys. Lett., vol. 58, pp. 1010-1012, 1991.
7. K. H. Huang et al., "Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer," Appl. Phys. Lett., vol. 61, pp. 1045-1047, 1992.
8. 0.5P/GaP light-emitting diodes," Appl. Phys. Lett., vol. 64, pp. 2839-2841, 1994.
9. 0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency," Appl. Phys. Lett., vol. 75, pp. 2365-2367, 1999.
10. K. Streubel, N. Under, R. Wirth, and A. Jaeger, "High brightness AlGaInP light-emitting diodes," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 2, pp. 321-332, Mar. 2002.
11. F. A. Kish and R. M. Fletcher, "AlGaInP light-emitting diodes," in Semiconductors and Semimetals, G. Stringfellow and M. G. Craford, Eds. San Diego, CA: Academic, 1997, vol. 48, pp. 149-226.
12. D. P. Bour, D. W. Treat, R. L. Thornton, R. S. Geels, and D. F. Welch, "Drift leakage current in AlGaInP quantum-well lasers," IEEE J. Quantum Electron., vol. 29, no. 5, pp. 1337-1343, May 1993.
13. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer," Appl. Phys. Lett., vol. 48, pp. 353-355, 1986.
14. H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, "P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)," Jpn. J. Appl. Phys., vol. 28, pp. L2112-L2114, 1989.
15. S. Nakamura, M. Senoh, and T. Mukai, "High-power InGaN/GaN double-heterostructure violet light emitting diodes," Appl. Phys. Lett., vol. 62, pp. 2390-2392, 1993.
16. S. Nakamura, M. Senoh, N. Iwasa, and S.-I. Nagahama, "High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes" Appl. Phys. Lett., vol. 67, pp. 1868-1870, 1995.
17. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, "InGaN-based multi-quantum-well-structure laser diodes," Jpn. J. Appl. Phys., vol. 35, pp. L74-L76, 1996.
18. S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, "Correlation of cathodoluminescence inhomogeneity with microstructural detects in epitaxial GaN grown by metalorganic chemical-vapor deposition," Appl. Phys. Lett., vol. 70, pp. 420-422, 1997.
19. S. Nakamura, "The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes," Science, vol. 14, pp. 956-961, 1998.
20. F. Bernardini, V. Fiorentini, and D. Vanderbilt, "Spontaneous polarization and piezoelectric constants of III-V nitrides," Phys. Rev. B, vol. 56, pp. R10024-R10027, 1997.
21. T. Takeuchi et al., "Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect," Appl. Phys. Lett., vol. 73, pp. 1691-1693, 1998.
22. N. F. Gardner, J. C. Kim, J. J. Wierer, Y.-C. Shen, and M. R. Krames, "Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes," Appl. Phys. Lett., vol. 86, p. 111101, 2005.
23. R. Sharma et al., "Demonstration of a semipolar (10-1-3) InGaN/GaN green light emitting diode," Appl. Phys. Lett., vol. 87, p. 231110, 2005.
24. M. Funato et al., "Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {11-22} GaN bulk substrates," Jpn. J. Appl. Phys., vol. 45, pp. L650-L662, 2006.
25. N. A. El-Masry, E. L. Piner, S. X. Liu, and S. M. Bedair, "Phase separation in InGaN grown by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 72, pp. 40-42, 1998.
26. K. Iida et al., "350.9 nm UV laser diode grown on low-dislocation-density AlGaN," Jpn. J. Appl. Phys., vol. 43, pp. L499-L500, 2004.
27. W. B. Joyce, R. Z. Bachrach, R. W. Dixon, and D. A. Sealer, "Geometrical properties of random particles and the extraction of photons from electroluminescent diodes," J. Appl. Phys., vol. 45, pp. 2229-2253, 1974.
28. G. O. Mueller, Philips Lumileds Lighting Co., San Jose, CA, data, unpublished.
29. H. Sugawara, K. Itaya, H. Nozaki, and G. Hatakoshi, "High-brightness InGaAlP green light-emitting diodes," Appl. Phys. Lett., vol. 61, pp. 1775-1777, 1992.
30. I. Schnitzer and E. Yablonovitch, "30% external quantum efficiency from surface textured, thin-film light-emitting diodes," Appl. Phys. Lett., vol. 63, pp. 2174-2176, 1993.
31. K. Streubel, Osram Opto Semiconductors, Regensburg, Germany, Jul. 2006, private communication.
32. 0.5P light-emitting diodes with thin (≤ 2000Å) active regions," Appl. Phys. Lett., vol. 74, pp. 2230-2232, 1999.
33. J.Edmond et al., "High efficiency GaN-based LEDs and lasers on SiC," J. Crystal Growth, vol. 272, pp. 242-250, 2004.
34. M. Yamada et al., "InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode," Jpn. J. Appl. Phys., vol. 41, pp. L1431-L1433, 2002.
35. Y. Narukawa et al., "Ultra-high efficiency white light-emitting diodes," Jpn. J. Appl. Phys., vol. 45, pp. L1084-L1086, 2006.
36. J. J. Wierer et al., "High-power AlGaInN flip-chip light-emitting diodes," Appl. Phys. Lett., vol. 78, pp. 3379-3381, 2001.
37. D. A. Steigerwald et al., "Illumination with solid state lighting technology," IEEE J. Sel. Topics Quant. Electron., vol. 8, pp. 310-320, 2002.
38. Y.-C. Shen et al., "Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes," Appl. Phys. Lett., vol. 82, pp. 2221-2223, 2003.
39. M. K. Kelly, O. Ambacher, R. Dimitrov, R. Handschuh, and M. Stutzmann, "Optical process for liftoff of group III-nitride films," Phys. Stat. Sol. (A), vol. 159, pp. R3-R4, 1997.
40. W. S. Wong, T. Sands, and N. W. Cheung, "Damage-free separation of GaN thin films from sapphire substrates," Appl. Phys. Lett., vol. 72, pp. 599-601, 1998.
41. V. Haerle et al., "High brightness LEDs for general lighting applications using the new ThinGaN technology," Phys. Stat. Sol. (A), vol. 201, pp. 2736-2739, 2004.
42. D. Morita et al., "Watt-class high-output-power 365 nm ultraviolet light-emitting diodes," Jpn. J. Appl. Phys., vol. 43, pp. 5945-5950, 2004.
43. O. B. Shchekin et al., "High performance thin-film flip-chip InGaN-GaN light-emitting diodes," Appl. Phys. Lett., vol. 89, p. 071109, 2006.
44. J. J. Wierer, D. A. Kellogg, and N. Holonyak, Jr., "Tunnel contact junction native-oxide aperture and mirror vertical-cavity surface-emitting lasers and resonant-cavity light-emitting diodes," Appl. Phys. Lett., vol. 74, pp. 926-928, 1999.
45. R. Joray, R. P. Stanley, and M. Ilegems, "High efficiency planar MCLEDs," Phys. Stat. Sol. (B), vol. 242, pp. 2315-2325, 2005.
46. S. Fan, P. R. Villeneuve, J. D. Joannopoulos, and E. F. Schubert, "High extraction efficiency of spontaneous emission from slabs of photonic crystals," Phy. Rev. Lett., vol. 78, pp. 3294-3297, 1997.
47. M. Rattier et al., "Toward ultrahigh-efficiency aluminum oxide microcavity light-emitting diodes: Guided mode extraction by photonic crystals," IEEE J. Select. Top. Quant. Electron., vol. 8, pp. 238-247, 2002.
48. J. J. Wierer et al., "InGaN/GaN quantum-well-heterostructure light-emitting diodes employing photonic crystal structures," Appl. Phys. Lett., vol. 84, pp. 3885-3887, 2004.
49. M. Boroditsky et al., "Surface recombination measurements on III-V candidate materials for nanostructure light-emitting diodes," J. Appl. Phys., vol. 87, pp. 3497-3504, 2000.
50. G. E. Stillman, M. D. Sirkis, J. A. Rossi, M. R. Johnson, and N. Holonyak, Jr., "Volume excitation of an ultrathin single-code CdSe laser," Appl. Phys. Lett., vol. 9, pp. 268-269, 1966.
51. P. Schlotter, R. Schmidt, and J. Schneider, "Luminescence conversion of blue light emitting diodes," Appl. Phys. A, vol. 64, pp. 417-418, 1997.
52. S. Nakamura and G. Fasol, The Blue Laser Diode. Berlin, Germany: Springer, 1997, pp. 216-219.
53. R. Mueller-Mach, G. O. Mueller, M. R. Krames, and T. Trottier, "Highpower phosphor-converted light-emitting diodes based on III-nitrides," IEEE J. Select. Top. Quant. Electron., vol. 8, pp. 339-345, 2002.
54. 6: Fluorescence, thermoluminescence, and upconversion," J. Phys. Chem. Solids, vol. 61, pp. 2001-2006, 2000.
55. R. Mueller-Mach et al., "Highly efficient all-nitride phosphor-converted white light emitting diode," Phys. Stat. Sol. (A), vol. 202, pp. 1727-1732, 2005.
56. G. O. Mueller, R. Mueller-Mach, and M. R. Krames, "Proposal for a new metric on the illumination quality of light," in LRO Symp. on Light and Color, 2005.
57. W. Davis and Y. Ohno, "Toward an improved color rendering metric," in Proc. SPIE, 2005, vol. 5941, pp. 283-290.
58. P. N. Grillot, M. R. Krames, H. Zhao, and S.-H. Teoh, "Sixty thousand hour light output reliability of AlGaInP light emitting diodes," IEEE Trans. Dev. Mater. Rel., submitted for publication.
59. G. E. Höfler, C. Carter-Coman, M. R. Krames, N. F. Gardner, F. A. Kish, T. S. Tan, B. Loh, J. Posselt, D. Collins, and G. Sasser, "Highflux, high-efficiency transparent-substrate AlGaInP/GaP light-emitting diodes," Electron. Lett., vol. 34, pp. 1781-1782, 1998.
60. N. Narendran, Rensselaer Polytechnic Institute, Troy, NY, Troy, NY, Jul. 2006, private communication.
61. G. Derra, "UHP lamp systems for projection applications," J. Phys. D: Appl. Phys., vol. 38, pp. 1995-3110, 2005.
62. "Solid-State Lighting Research and Development Portfolio," 2006, p. 48, prepared for U.S. Dep. of Energy.
63. R. Haitz, F. Kish, J. Tsao, and J. Nelson, "The case for a national research program on semiconductor lighting," presented at the Optoelectronics Industry Development Association, Washington, D.C., 1999, unpublished.
64. G. Harbers, S. Bierhuizen, and M. R. Krames, "Performance of high power light-emitting diodes in display applications," J. Display Technol., no. 2, Jun. 2007.