Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) and semipolar (11-22) GaN in relation to microstructural characterization

Journal of Applied Physics

Volumn 101, Issue 11, 2007, Pages

  Guhne T ^a   Bougrioua, Z ^a,c   Vennegues P ^a   Leroux, M ^a   Albrecht, M ^b  

^a CNRS   (France)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ENERGY GAP; GALLIUM NITRIDE; MICROSTRUCTURAL EVOLUTION; OPTICAL TRANSITIONS; TRANSMISSION ELECTRON MICROSCOPY;

CATHODOLUMINESCENCE SPECTROSCOPY; DEFECT RELATED EMISSIONS; EPITAXIAL-LATERAL-OVERGROWTH (ELO); STRUCTURAL DEFECT DENSITIES;

EPITAXIAL GROWTH;

EID: 34250612314     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2740361     Document Type: Article

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