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Volumn 106, Issue 12, 2009, Pages

Morphological and microstructural evolution in the two-step growth of nonpolar a -plane GaN on r -plane sapphire

(7) Sun, Qian a Kong, Bo Hyun b Yerino, Christopher D a Ko, Tsung Shine a Leung, Benjamin a Cho, Hyung Koun b Han, Jung a

a Yale University (United States)

b Sungkyunkwan University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE GAN; BASAL PLANES; CONTROLLED GROWTH; EXTENDED DEFECT; GAN FILM; GAN GROWTH; GROWTH FRONT; HIGH PRESSURE; LATERAL GROWTH; LOW PRESSURES; MICROSCOPY IMAGING; MICROSTRUCTURE DEVELOPMENT; MORPHOLOGICAL EVOLUTION; NON-POLAR; PARTIAL DISLOCATIONS; PLANE SAPPHIRE; RECOVERY PROCESS; ROUGH SURFACES; SUBSTANTIAL REDUCTION; TEM; TEM IMAGES; TWO-STEP GROWTH; WULFF PLOTS; X-RAY ROCKING CURVE ANALYSIS;

COALESCENCE; DEFECT DENSITY; GALLIUM ALLOYS; MICROSTRUCTURE; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 73849095031 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3272790 Document Type: Article

Times cited : (77)

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