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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1658-1661

Characterization of structural defects in (11̄20) GaN films grown on (11̄02) sapphire substrates

(3) Vennegues P a Mathal, F a Bougrioua, Z a

a CRHEA CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACIAL REGION; PARTIAL DISLOCATIONS; SAPPHIRE SUBSTRATES; 61.72.NN; 68.37.LP; 68.55.LN; 81.05.EA; 81.15.KK;

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); FILM GROWTH; SAPPHIRE; STACKING FAULTS; SUBSTRATES; BURGERS VECTOR; GALLIUM NITRIDE; SURFACE DEFECTS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE; STACKING FAULTS;

EID: 33746323953 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200565292 Document Type: Conference Paper

Times cited : (29)

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