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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1786-1788

Morphological study of non-polar (11-20) GaN grown on r-plane (1-102) sapphire

(4) Johnston, C F a Kappers, M J a Barnard, J S a Humphreys, C J a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; AZIMUTHAL ANGLE; GAN EPILAYERS; GAN GROWTH; HIGH DENSITY; HIGH QUALITY; HIGH-RESOLUTION X-RAY DIFFRACTION; MORPHOLOGICAL STUDY; MOVPE; NON-POLAR; NON-POLAR GAN; TEM; THREADING DISLOCATION; THREE STAGES; V/III RATIO; XRD;

ATOMIC FORCE MICROSCOPY; FILM GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; ORGANIC LIGHT EMITTING DIODES (OLED); SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; STACKING FAULTS; X RAY DIFFRACTION;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 51749098508 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200778638 Document Type: Conference Paper

Times cited : (16)

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