Maskless selective growth of semi-polar (1 12̄ 2) GaN on Si (3 1 1) substrate by metal organic vapor phase epitaxy

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2914-2918

  Yang, Min ^a,b   Ahn, Hyung Soo ^a   Tanikawa, Tomoyuki ^b   Honda, Yoshio ^b   Yamaguchi, Masahito ^b   Sawaki, Nobuhiko ^b  

^a Korea Maritime University   (South Korea)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

A1. Defects; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

A1. DEFECTS; A3. METALORGANIC VAPOR PHASE EPITAXY; A3. SELECTIVE EPITAXY; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS;

COALESCENCE; CRYSTAL DEFECTS; CRYSTAL GROWTH; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON; SIZE DISTRIBUTION; SUBSTRATES; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 65749103613     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.064     Document Type: Article

References (20)

1. Liu L., and Edgar J.H. Mater. Sci. Eng. R 37 (2002) 61
2. Tanaka S., Honda Y., Kameshiro N., Iwasaki R., Sawaki N., and Tanji T. Jpn. J. Appl. Phys. 41 (2002) L846
3. Honda Y., Kameshiro N., Yamaguchi M., and Sawaki N. J. Crystal Growth 242 (2002) 82
4. Hikosaka T., Narita T., Honda Y., Yamaguchi M., and Sawaki N. Appl. Phys. Lett. 84 (2004) 4717
5. Hikosaka T., Koide N., Honda Y., Yamaguchi M., and Sawaki N. J. Crystal Growth 298 (2007) 207
6. Hikosaka T., Honda Y., Yamaguchi M., and Sawaki N. J. Appl. Phys. 101 (2007) 103513
7. T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki, The Thirty Fourth Int. Symp. Compd Semicond. Kyoto TuA III, 5, 2007.
8. Kim M.H., Choi Y.H., Yi J.H., Yang M., Jeon J.N., Khym S.W., and Leem S.J. Appl. Phys. Lett. 79 (2001) 1619
9. Kim M.H., Choi Y.C., Yi J.H., Yang M., Jeon J.N., Khym S.W., and Leem S.J. J. Crystal Growth 236 (2002) 95
10. Moram M.A., Kappers M.J., Barber Z.H., and Humphreys C.J. J. Crystal Growth 298 (2007) 268
11. Marx D., Kawa Z., Nakayama T., Mihashi Y., Takami T., Nunoshita M., and Ozeki T. J. Crystal Growth 189-190 (1998) 87
12. Tanaka T., Uchida K., Watanabe A., and Minagawa S. Appl. Phys. Lett. 68 (1996) 976
13. Jones S.H., Seidel L.K., Lau K.M., and Harold M. J. Crystal Growth 108 (1991) 73
14. Kudo K., Sasaki T., and Yamaguchi M. J. Crystal Growth 170 (1997) 634
15. Tanikawa T., Hikosaka T., Honda Y., Yamaguchi M., and Sawaki N. Phys. Status Solidi C 5 (2008) 2966
16. Chichibu S., Shikanai A., Azuhata T., Sota T., Kuramata A., Horino K., and Nakamura S. Appl. Phys. Lett. 68 (1996) 3766
17. Shikanai A., Azuhata T., Sota T., Chichibu S., Kuramata A., Horino K., and Nakamura S. J. Appl. Phys. 81 (1997) 417
18. Koide N., Hikosaka T., Honda Y., Yamaguchi M., and Sawaki N. J. Crystal Growth 284 (2005) 341
19. Wetzel C., Fisher S., Krueger J., Haller E.E., Molner R.J., Moustakas T.D., Mokhov E.N., Amano H., and Akasaki I. Appl. Phys. Lett. 68 (1996) 2556
20. Rieger W., Dimitrov R., Brunner D., Rohrer E., Ambacher O., and Stutzmann M. Phys. Rev. B 54 (1996) 17596