Selective nucleation and controlled growth: Quantum dots on metal, insulator and semiconductor surfaces

Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences

Volumn 361, Issue 1803, 2003, Pages 311-329

  Venables, J A ^a,d   Bennett, P A ^a   Brune, H ^b   Drucker, J ^a   Harding, J H ^c   Dobson, P ^e   Oliver, R A ^e   Stoneham, A M ^c  

^a ARIZONA STATE UNIVERSITY   (United States)

^b EPFL   (Switzerland)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

^d UNIVERSITY OF SUSSEX   (United Kingdom)

^e UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

Metal growth; Nucleation and growth; Patterned substrates; Rate equations; Rate diffusion equations; Semiconductor growth

Indexed keywords

EID: 0141991928     PISSN: 1364503X     EISSN: None     Source Type: Journal    
DOI: 10.1098/rsta.2002.1130     Document Type: Conference Paper

References (46)

1. Barabási, A.-L. 1997 Self-assembled island formation in heteroepitaxial growth. Appl. Phys. Lett. 70, 2565-2567.
2. Bennett, P. A. & von Känel, H. 1999 Scanning tunneling microscopy of suicides. J. Phys. D 32, R71-R87.
3. Bennett, P. A., Cahill, D. G. & Copel, M. 1994 Interstitial precursor to suicide formation on Si(111)-(7 × 7). Phys. Rev. Lett. 73, 452-455.
4. Borovsky, B., Kruger, M. & Ganz, E. 1997a Diffusion of the silicon dimer on Si(001): new possibilities at 450 K. Phys. Rev. Lett. 78, 4229-4232.
5. Borovsky, B., Kruger, M. & Ganz, E. 1997b Diffusion of adsorbed Si dimers on Si(001). Surf. Sci. 385, 146-154.
6. Borovsky, B., Kruger, M. & Ganz, E. 1999 Piecewise diffusion of the silicon dimer. Phys. Rev. B 59, 1598-1601.
7. Brune, H. 1998 Microscopic view of epitaxial metal growth: nucleation and aggregation. Surf. Sci. Rep. 31, 121-229.
8. Brune, H., Giovannini, M., Bromann, K. & Kern, K. 1998 Self-organized growth of nanostructure arrays on strain-relief patterns. Nature 394, 451-453.
9. Brune, H., Bales, G. S., Jacobsen, J., Boragno, C. & Kern, K. 1999 Measuring surface diffusion from nucleation island densities. Phys. Rev. B 60, 5991-6006.
10. Chaparro, S. A., Zhang, Y., Drucker, J., Chandrasekhar, D. & Smith, D. J. 2000a Evolution of Ge/Si(100) islands: island size and temperature dependence. J. Appl. Phys. 87, 2245-2254.
11. Chaparro, S. A., Zhang, Y. & Drucker, J. 2000b Strain relief via trench formation in Ge/Si(100) islands. Appl. Phys. Lett. 76, 3534-3536.
12. Denker, U., Schmidt, O. G., Jin-Philipp, N.-Y. & Eberl, K. 2001 Trench formation around and between self-assembled Ge islands on Si. Appl. Phys. Lett. 78, 3723-3725.
13. Drucker, J. 1993 Coherent islands and microstructural evolution. Phys. Rev. B 48, 18 203-18 206.
14. Ehrlich, G. 1991 Direct observation of the surface diffusion of atoms and clusters. Surf. Sci. 246, 1-12.
15. Ehrlich, G. 1994 Diffusion of individual adatoms. Surf. Sci. 299-300, 628-642.
16. Enomoto, Y. 2001 Coarsening dynamics of self-assembled quantum dots with elastic field interactions. Surf. Sci. 493, 585-590.
17. Ferrari, A. M. & Pacchioni, G. 1996 Metal deposition on oxide surfaces; a quantum-chemical study of the interaction of Rb, Pd and Ag atoms with the surface vacancies of MgO. J. Phys. Chem. 100, 9032-9037.
18. Haas, G., Menck, A. Brune, H., Earth, J. V., Venables, J. A. & Kern, K. 2000 Nucleation and growth of supported clusters at defect sites: Pd/MgO (001). Phys. Rev. B 61, 11105-11108.
19. 2(111). J- Appl. Phys. 80, 1161-1170.
20. Kellogg, G. L. 1994 Field ion microscope studies of single-atom surface diffusion and cluster nucleation on metal surfaces. Surf. Sci. Rep. 21, 1-88.
21. Knorr, N., Brune, H., Epple, M., Hirstein, A., Schnieder, M. A. & Kern, K. 2002 Long-range adsorbate interactions mediated by a two-dimensional electron gas. Phys. Rev. B 65, 115420.
22. Krishnamurthy, M., Drucker, J. S. & Venables, J. A. 1991 Microstructural evolution during the heteroepitaxy of Ge on vicinal Si(100). J. Appl. Phys. 69, 6461-6471.
23. Lee, C. & Barabási, A.-L. 1998 Spatial ordering of islands grown on patterned surfaces. Appl. Phys. Lett. 73, 2651-2653.
24. McDaniels, T. H., Venables, J. A. & Bennett, P. A. 2001 Island nucleation in a reactive two- component system. Phys. Rev. Lett. 87, 176105.
25. Ovesson, S., Bogicevic, A., Wahnström, G. & Lundqvist, B. I. 2001 Neglected adsorbate interactions behind diffusion prefactor anomalies on metals. Phys. Rev. B 64, 125423.
26. Petersen, M., Ratsch, C., Caflisch, R. E. & Zangwill, A. 2001 Level set approach to reversible epitaxial growth. Phys. Rev. E 64, 061602.
27. Raab, A., Lechner, R. T. & Springholz, G. 2002 Self-organized lateral ordering for vertically aligned PbSe/PbEuTe quantum dot superlattices. Appl. Phys. Lett. 80, 1273-1275.
28. Ramstad, A., Brocks, G. & Kelly, P. J. 1995 Theoretical study of the Si(100) surface reconstruction. Phys. Rev. B 51, 14504-14523.
29. Ratsch, C., Gyure, M. F., Caflisch, R. E., Gibou, F., Petersen, M., Garcia, J., Kang, M. & Vvedensky, D. D. 2002 Level set method for island dynamics in epitaxial growth. Phys. Rev. B 65, 195403.
30. Repp, J., Moresco, F., Meyer, G., Rieder, K.-H., Hyldgaard, P. & Persson, M. 2000 Substrate mediated long-range oscillatory interaction between adatoms: Cu/Cu(111). Phys. Rev. Lett. 85, 2981-2984.
31. Ross, F. M., Tersoff, J. & Tromp, R. M. 1998 Coarsening of self-assembled Ge quantum dots on Si(001). Phys. Rev. Lett. 80, 984-987.
32. 1-xAs/GaAs alloy quantum dots. Phys. Rev. B 64, 125302.
33. Swartzentruber, B. S. 1996 Direct measurement of surface diffusion using atom-tracking scanning tunneling microscopy. Phys. Rev. Lett. 76, 459-462.
34. Thies, W. & Tromp, R. M. 1996 Nucleation in Si(001) homoepitaxial growth. Phys. Rev. Lett. 76, 2770-2773.
35. Tromp, R. M. & Hannon, J. B. 2002 Thermodynamics of nucleation and growth. Surf. Rev. Lett. 9, 1565-1593.
36. Tromp, R. M. & Mankos, M. 1998 Thermal adatoms on Si(001). Phys. Rev. Lett. 81,1050-1053.
37. Tsong, T. T. 1990 Atom-probe field ion microscopy. Cambridge University Press.
38. Venables, J. A. 1973 Rate equation approaches to thin film nucleation kinetics. Phil. Mag. 27, 697-738.
39. Venables, J. A. 1987 Nucleation calculations in a pair-binding model. Phys. Rev. B 36, 4153- 4162.
40. Venables, J. A. 1994 Atomic processes in crystal growth. Surf. Sci. 299-300, 798-817.
41. Venables, J. A. 2000 Introduction to surface and thin film processes, ch. 4-5. Cambridge University Press.
42. Venables, J. A. & Brune, H. 2002 Capture numbers in the presence of repulsive adsorbate interactions. Phys. Rev. B 66, 195404.
43. Venables, J. A. & Harding, J. H. 2000 Nucleation and growth of supported metal clusters at defect sites on oxide and halide (001) surfaces. J. Cryst. Growth 211, 27-33.
44. Venables, J. A., Metcalfe, F. L. & Sugawara, A. 1997 Competing processes and controlling energies at the Ag/Ge(111) interface. Surf. Sci. 371, 420-430.
45. Wang, Y. L. & Lai, M. Y. 2001 Formation of surface magic clusters: a pathway to monodispersed nanostructures on surfaces. J. Phys. Condens. Matter 13, R589-R618.
46. Zinsmeister, G. 1966 A contribution to Frenkel's theory of codensation. Vacuum 16, 529-535.