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Journal of Applied Physics

Volumn 108, Issue 11, 2010, Pages

Study of the epitaxial relationships between III-nitrides and M-plane sapphire

(4) Venńgùs, Philippe a Zhu, Tiankai b Martin, Denis b Grandjean, Nicolas b

a CNRS (France)

b EPFL (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL RELATIONSHIPS; GAN FILM; GROWING FILMS; III-NITRIDES; M-PLANE; NON-POLAR; SAPPHIRE SURFACE; SEMIPOLAR; SURFACE ENERGIES;

EPITAXIAL GROWTH; FILM GROWTH; GALLIUM NITRIDE; LATTICE MISMATCH; SAPPHIRE; SURFACE CHEMISTRY; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL FILMS;

EID: 78751477817 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3514095 Document Type: Article

Times cited : (41)

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