Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method

Journal of Applied Physics

Volumn 105, Issue 7, 2009, Pages

  Johnston, C F ^a   Kappers, M J ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

2D GROWTHS; 3-D GROWTHS; A PLANES; AFM; ATOMIC-FORCE MICROSCOPIES; BASAL PLANE STACKING FAULTS; CROSS-SECTIONAL TEM; DISLOCATION DENSITIES; FREE FILMS; GAN ISLANDS; GROWTH CONDITIONS; GROWTH OF GAN; HIGH PRESSURES; INITIAL STAGES; LOWER PRESSURES; METAL-ORGANIC VAPOR PHASE EPITAXIES; NON-POLAR; PARTIAL DISLOCATIONS; REACTOR CONDITIONS; TEM; THREE-DIMENSIONAL (3D); V/III RATIOS;

ATOMIC FORCE MICROSCOPY; COALESCENCE; CORUNDUM; CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; MICROSTRUCTURE; ORGANOMETALLICS; SAPPHIRE; SEMICONDUCTING GALLIUM; THREE DIMENSIONAL; TRANSMISSION ELECTRON MICROSCOPY;

FILM GROWTH;

EID: 65249150138     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3103305     Document Type: Article

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