Growth and properties of semi-polar GaN on a patterned silicon substrate

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2867-2874

  Sawaki, Nobuhiko ^a   Hikosaka, Toshiki ^a   Koide, Norikatsu ^a   Tanaka, Shigeyasu ^a   Honda, Yoshio ^a   Yamaguchi, Masahito ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B1. Light emitting diodes; B1. Nitrides

Indexed keywords

A3. METALORGANIC VAPOR PHASE EPITAXY; A3. SELECTIVE EPITAXY; ACCEPTOR LEVELS; ATOMIC CONFIGURATION; B1. LIGHT EMITTING DIODES; B1. NITRIDES; C-DOPED; EPITAXIAL LATERAL OVERGROWTH; ETCHING METHOD; GAN LAYERS; METAL-ORGANIC VAPOR PHASE EPITAXY; OPTICAL AND ELECTRICAL PROPERTIES; P-TYPE; PATTERNED SILICON; SELECTIVE AREA GROWTH; SI SUBSTRATES;

DIODES; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; ORGANIC LIGHT EMITTING DIODES (OLED); PHYSICAL OPTICS; SEMICONDUCTING GALLIUM; SILICON; SUBSTRATES; VAPORS; WATER ANALYSIS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 65749113691     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.032     Document Type: Article

References (25)

1. Amano H., Sawaki N., Akasaki I., and Toyoda Y. Appl. Phys. Lett. 48 (1986) 353
2. Liu L., and Edgar J.H. Mater. Sci. Eng. R37 (2002) 61
3. Krost A., and Dadgar A. Phys. Status Solidi A 194 (2002) 361
4. Honda Y., Kuroiwa Y., Yamaguchi M., and Sawaki N. Appl. Phys. Lett. 80 (2002) 222
5. Takeuchi T., Takeuchi H., Sota S., Sakai H., Amano H., and Akasaki I. Jpn. J. Appl. Phys. 36 (1997) L177
6. Imer B.M., Wu F., DenBaars S.P., and Speck J.S. Appl. Phys. Lett. 88 (2006) 061908
7. Iida D., Kawashima T., Iwaya M., Kamiyama S., Amano H., and Akasaki I. Phys. Status Solidi C 5 (2008) 1575
8. Funato M., Ueda M., Kawakami Y., Narukawa Y., Kosugi T., Takahashi M., and Mukai T. Jpn. J. Appl. Phys. 45 (2006) L659
9. Tanaka S., Honda Y., Kameshiro N., Iwasaki R., Sawaki N., and Tanji T. Jpn. J. Appl. Phys. 41 (2002) L846
10. Honda Y., Kawaguchi Y., Ohtake Y., Tanaka S., Yamaguchi M., and Sawaki N. J. Cryst. Growth 230 (2001) 346
11. N. Sawaki, Y. Honda, N. Kameshiro, N. Koide, S. Tanaka, Inst. Phys. Conf. Ser. No. 171 (2002) CD-ROM, D-D21.
12. Honda Y., Kameshiro N., Yamaguchi M., and Sawaki N. J. Cryst. Growth 242 (2002) 82
13. Hikosaka T., Koide N., Honda Y., Yamaguchi M., and Sawaki N. J. Cryst. Growth 298 (2007) 207
14. Hikosaka T., Narita T., Honda Y., Yamaguchi M., and Sawaki N. Appl. Phys. Lett. 84 (2004) 4717
15. Hikosaka T., Honda Y., Koide N., Yamaguchi M., and Sawaki N. Inst. Phys. Conf. Ser. 184 (2005) 251
16. Tang H., Webb J.B., Bardwell J.A., Raymond S., Salzman J., and Uzan-Saguy C. Appl. Phys. Lett. 78 (2001) 757
17. Webb J.B., Tang H., Rolfe S., and Bardwell J.A. Appl. Phys. Lett. 75 (1999) 953
18. Koide N., private communication, Koide N., Hikosaka T., Honda Y., Yamaguchi M., and Sawaki N. J. Cryst. Growth 284 (2005) 341
19. Götz W., Johnson N.M., Chen C., Liu H., Kuo C., and Imler W. Appl. Phys. Lett. 68 (1996) 3144
20. Hikosaka T., Koide N., Honda Y., Yamaguchi M., and Sawaki N. Phys. Status Solidi C 3 (2006) 1425
21. Korotkov R.Y., Gregie J.M., and Wessels B.W. Appl. Phys. Lett. 78 (2001) 222
22. Sun Q., Selloni A., Myers T.H., and Doolittle W.A. Phys. Rev. B 73 (2006) 155337
23. Tanikawa T., Hikosaka T., Honda Y., Yamaguchi M., and Sawaki N. Phys. Status Solidi C 5 (2008) 2966
24. T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki, ICMOVPE -XIV, Metz, (2008) TuP-45.
25. Hikosaka T., Tanikawa T., Honda Y., Yamaguchi M., and Sawaki N. Phys. Status Solidi C 5 (2008) 2234