Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

Applied Physics Letters

Volumn 83, Issue 4, 2003, Pages 644-646

  Haskell, B A ^a,b   Wu, F ^a,b   Craven, M D ^a,b   Matsuda, S ^a,b   Fini, P T ^a,b   Fujii, T ^a,b   Fujito, K ^a,b   DenBaars, S P ^a,b   Speck, J S ^a,b   Nakamura, Shuji ^a,b  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; DEFECTS; DISLOCATIONS (CRYSTALS); HYDRIDES; MASKS; STACKING FAULTS; THIN FILMS; VAPOR PHASE EPITAXY; X RAYS;

THREADING DISLOCATION DENSITIES;

GALLIUM NITRIDE;

EID: 0043014817     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1593817     Document Type: Article

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