Optical emission characteristics of semipolar (1 1 2̄ 2) GaN light-emitting diodes grown on m-sapphire and stripe-etched r-sapphire

Semiconductor Science and Technology

Volumn 27, Issue 2, 2012, Pages

  Leung, Benjamin ^a   Zhang, Yu ^a   Yerino, Christopher D ^a   Han, Jung ^a   Sun, Qian ^b   Chen, Zhen ^b   Lester, Steve ^b   Liao, Kuan Yung ^c   Li, Yun Li ^c  

^a Yale University   (United States)

^b Bridgelux Inc   (United States)

^c GENESIS PHOTONICS INC   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION PROPERTIES; GAN LIGHT-EMITTING DIODES; HIGH DENSITY; LED STRUCTURE; MICRO-STRUCTURAL; MICROSTRUCTURAL DEFECTS; MORPHOLOGICAL FEATURES; OFF-AXIS; OPTICAL CHARACTERIZATION; OPTICAL EMISSIONS; R-SAPPHIRE; RADIATIVE RECOMBINATION; ROCKING CURVES; SELECTIVE GROWTH; SEMIPOLAR; SIMULTANEOUS GROWTH; SPECTRAL PROPERTIES; TWO-STEP GROWTH;

EPITAXIAL GROWTH; GALLIUM NITRIDE; LIGHT EMISSION; SAPPHIRE; SURFACE DEFECTS; SURFACE ROUGHNESS; X RAY DIFFRACTION;

LIGHT EMITTING DIODES;

EID: 84862946243     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/2/024016     Document Type: Article

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