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Volumn 5, Issue 6, 2008, Pages 1768-1770

Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth: Optical evidences for a reduced stacking fault density

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; DEFECT-RELATED EMISSION; EMISSION BANDS; EMISSION SPECTRUMS; EPITAXIAL LATERAL OVERGROWTH; GAN LAYERS; LATERAL OVERGROWTH; M-PLANE; MOCVD; NON-POLAR; NON-POLAR GAN; PL MEASUREMENTS; PL SPECTRA; SPATIALLY RESOLVED; SPECTRAL REGION; STACKING FAULT DENSITY; WIDTH RATIO;

EID: 57249091980     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778632     Document Type: Conference Paper
Times cited : (13)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.