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Volumn 5, Issue 6, 2008, Pages 1768-1770
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Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth: Optical evidences for a reduced stacking fault density
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Author keywords
[No Author keywords available]
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Indexed keywords
A-PLANE;
DEFECT-RELATED EMISSION;
EMISSION BANDS;
EMISSION SPECTRUMS;
EPITAXIAL LATERAL OVERGROWTH;
GAN LAYERS;
LATERAL OVERGROWTH;
M-PLANE;
MOCVD;
NON-POLAR;
NON-POLAR GAN;
PL MEASUREMENTS;
PL SPECTRA;
SPATIALLY RESOLVED;
SPECTRAL REGION;
STACKING FAULT DENSITY;
WIDTH RATIO;
CHEMICAL VAPOR DEPOSITION;
EMISSION SPECTROSCOPY;
EPITAXIAL GROWTH;
GALLIUM ALLOYS;
SEMICONDUCTOR QUANTUM WIRES;
SOIL CONSERVATION;
GALLIUM NITRIDE;
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EID: 57249091980
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200778632 Document Type: Conference Paper |
Times cited : (13)
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References (11)
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