Selective MOVPE of III-nitrides and device fabrication on an Si substrate

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7279, Issue , 2009, Pages

  Sawaki, Nobuhiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Impurity doping; MOVPE; Non polar GaN; Selective epitaxy; Semi polar GaN; Si photonics

Indexed keywords

IMPURITY DOPING; MOVPE; NON-POLAR GAN; SELECTIVE EPITAXY; SEMI-POLAR GAN; SI-PHOTONICS;

CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; ELECTROOPTICAL DEVICES; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GALLIUM NITRIDE; INTEGRATED OPTOELECTRONICS; LIGHT EMITTING DIODES; OPTICAL INSTRUMENTS; OPTOELECTRONIC DEVICES; PHOTONICS; PHYSICAL OPTICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; SUBSTRATES; THERMAL EXPANSION;

GALLIUM ALLOYS;

EID: 66249127886     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.822632     Document Type: Conference Paper

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