Nonpolar a- and m-plane bulk GaN sliced from boules: Structural and optical characteristics

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2536-2539

  Paskova, T ^a   Kroeger, R ^a   Hommel, D ^a   Paskov, P P ^b   Monemar, B ^b   Preble, E ^c   Hanser, A ^c   Williams, N M ^c   Tutor, M ^c  

^a UNIVERSITY OF BREMEN   (Germany)

^b LINKÖPING UNIVERSITY   (Sweden)

^c KYMA TECHNOLOGIES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; BULK GAN; LINE-WIDTHS; LOW DEFECT DENSITIES; M-PLANE; NITRIDE SEMICONDUCTORS; NON-POLAR; NON-POLAR GAN; NONPOLAR PLANES; OPTICAL CHARACTERISTICS; OPTICAL QUALITIES;

CRYSTALS; DEFECT DENSITY; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDE; LIGHT EMISSION; LUMINESCENCE; NITRIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

GALLIUM ALLOYS;

EID: 49749090432     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674818     Document Type: Conference Paper

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