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Applied Physics Letters

Volumn 95, Issue 3, 2009, Pages

Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well

(7) Shen, H a Wraback, M a Zhong, H b Tyagi, A b Denbaars, S P b Nakamura, S b Speck, J S b

a U S ARMY RESEARCH LABORATORY (United States)

b University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROREFLECTANCE; FLATBAND CONDITIONS; GROWTH DIRECTIONS; HETERO INTERFACES; IN-FIELD; INGAN/GAN; PIEZO-ELECTRIC FIELDS; POLARIZATION CHARGES; POLARIZATION FIELD; QUANTUM WELL; SEMIPOLAR; SINGLE QUANTUM WELL; ZERO-CROSSING;

GALLIUM; POLARIZATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 67651251296 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3167809 Document Type: Article

Times cited : (48)

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