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Volumn 2, Issue 3, 2009, Pages

M-plane GaN films grown on patterned a-plane sapphire substrates with 3-inch diameter

(8) Okuno, Koji a Saito, Yoshiki a Boyama, Shinya a Nakada, Naoyuki a Nitta, Shugo a Tohmon, Ryoichi George a Ushida, Yasuhisa a Shibata, Naoki a

a Toyoda Gosei Co Ltd (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; CRYSTAL GROWTH; DIELECTRIC MATERIALS; GALLIUM NITRIDE; SAPPHIRE; SEMICONDUCTING GALLIUM; SUBSTRATES;

A-PLANE SAPPHIRES; DIELECTRIC MASKS; EPITAXIAL RELATIONSHIPS; FULL WIDTH AT HALF-MAXIMUM; GAN FILMS; GAN LAYERS; METAL-ORGANIC VAPOR PHASE EPITAXIES; NONPOLAR M PLANES; TRANSPARENT SURFACES; X-RAY ROCKING CURVES;

GALLIUM ALLOYS;

EID: 62549146706 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.2.031002 Document Type: Article

Times cited : (30)

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