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Volumn 92, Issue 9, 2008, Pages

Optical properties of nearly stacking-fault-free m -plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density freestanding GaN substrates

(6) Chichibu, S F a,b Yamaguchi, H b Zhao, L b Kubota, M b Okamoto, K c Ohta, H c

a TOHOKU UNIVERSITY (Japan)

b UNIVERSITY OF TSUKUBA (Japan)

c ROHM CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SUBSTRATES;

DISLOCATION DENSITIES; HOMOEPITAXIAL FILMS; SUBSTRATE VALUES;

EPITAXIAL FILMS;

EID: 40549141118 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2842387 Document Type: Article

Times cited : (38)

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