Effect of NH3 flow rate on m-plane GaN growth on m-plane SiC by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 311, Issue 15, 2009, Pages 3824-3829

  Sun, Qian ^a   Yerino, Christopher D ^a   Zhang, Yu ^a   Cho, Yong Suk ^a   Kwon, Soon Yong ^a   Kong, Bo Hyun ^b   Cho, Hyung Koun ^b   Lee, In Hwan ^a,c   Han, Jung ^a  

^a Yale University   (United States)

^b Sungkyunkwan University   (South Korea)

^c Chonbuk National University   (South Korea)

Author keywords

A1. Morphology; A1. Planar defects; A1. X ray diffraction; A3. Metalorganic chemical vapor deposition; B2. Nonpolar; B2. Semiconducting gallium nitride

Indexed keywords

A1. MORPHOLOGY; A1. PLANAR DEFECTS; A1. X-RAY DIFFRACTION; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B2. NONPOLAR; B2. SEMICONDUCTING GALLIUM NITRIDE;

COALESCENCE; DIFFRACTION; FLOW RATE; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; X RAY DIFFRACTION;

SEMICONDUCTING GALLIUM;

EID: 67650354062     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.06.035     Document Type: Article

References (31)

1. Waltereit P., Brandt O., Trampert A., Grahn H.T., Mennliger J., Ramsteiner M., Reiche M., and Ploog K.H. Nature (London) 406 (2000) 865
2. Schmidt M.C., Kim K.-C., Sato H., Fellows N., Masui H., Nakamura S., DenBaars S.P., and Speck J.S. Jpn. J. Appl. Phys. 46 (2007) L126
3. Okamoto K., Ohta H., Nakagawa D., Sonobe M., Ichihara J., and Takasu H. Jpn. J. Appl. Phys. 45 (2006) L1197
4. Yamada H., Iso K., Saito M., Hirasawa H., Fellows N., Masui H., Fujito K., Speck J.S., DenBaars S.P., and Nakamura S. Phys. Status Solidi: Rapid Res. Lett. 2 (2008) 89
5. Schmidt M.C., Kim K.-C., Farrell R.M., Feezell D.F., Cohen D.A., Saito M., Fujito K., Speck J.S., DenBaars S.P., and Nakamura S. Jpn. J. Appl. Phys. 46 (2007) L190
6. Okamoto K., Ohta H., Chichibu S.F., Ichihara J., and Takasu H. Jpn. J. Appl. Phys. 46 (2007) L187
7. Kubota M., Okamoto K., Tanaka T., and Ohta H. Appl. Phys. Express 1 (2008) 011102
8. Okamoto K., Tanaka T., and Kubota M. Appl. Phys. Express 1 (2008) 072201
9. Sun Q., Cho Y.S., Lee I.-H., Han J., Kong B.H., and Cho H.K. Appl. Phys. Lett. 93 (2008) 131912
10. Sun Q., Kwon S.-Y., Ren Z., Han J., Onuma T., Chichibu S.F., and Wang S. Appl. Phys. Lett. 92 (2008) 051112
11. Craven M.D., Wu F., Chakraborty A., Imer B., Mishra U.K., DenBaars S.P., and Speck J.S. Appl. Phys. Lett. 84 (2004) 1281
12. Ni X., Fu Y., Moon Y.T., Biyikli N., and Morkoç H. J. Cryst. Growth 290 (2006) 166
13. Hollander J.L., Kappers M.J., McAleese C., and Humphreys C.J. Appl. Phys. Lett. 92 (2008) 101104
14. Sun Q., Ko T.-S., Yerino C.D., Zhang Y., Lee I.-H., Han J., Lu T.-C., Kuo H.-C., and Wang S.-C. Jpn. J. Appl. Phys. 48 (2009) 071002
15. Araki M., Mochimizo N., Hoshino K., and Tadatomo K. Jpn. J. Appl. Phys., Part 1 46 (2007) 555
16. Aschenbrenner T., Goepel K., Kruse C., Figge S., and Hommel D. Phys. Status Solidi C 5 (2008) 1836
17. Armitage R., Horita M., Suda J., and Kimoto T. J. Appl. Phys. 101 (2007) 033534
18. Suzuki K., Ichihara M., and Takeuchi S. Jpn. J. Appl. Phys., Part 1 33 (1994) 1114
19. Wright A.F. J. Appl. Phys. 82 (1997) 5259
20. Stampfl C., and Van de Walle C.G. Phys. Rev. B 57 (1998) R15052
21. Sun Y.J., Brandt O., Jahn U., Liu T.Y., Trampert A., Cronenberg S., Dhar S., and Ploog K.H. J. Appl. Phys. 92 (2002) 5714
22. Trampert A., Liu T.Y., Brandt O., and Ploog K.H. J. Phys. IV 132 (2006) 221
23. Liu T.Y., Trampert A., Sun Y.J., Brandt O., and Ploog K.H. Philos. Mag. Lett. 84 (2004) 435
24. Zakharov D.N., Liliental-Weber Z., Wagner B., Reitmeier Z.J., Preble E.A., and Davis R.F. Phys. Rev. B 71 (2005) 235334
25. Cho Y.S., Sun Q., Lee I.-H., Ko T.-S., Yerino C.D., Han J., Kong B.H., Cho H.K., and Wang S. Appl. Phys. Lett. 93 (2008) 111904
26. Du D., Srolovitz D.J., Coltrin M.E., and Mitchell C.C. Phys. Rev. Lett. 95 (2005) 155503
27. Yang T., Uchida K., Mishima T., Kasai J., and Gotoh J. Phys. Status Solidi A 180 (2000) 45
28. Hiramatsu K., Nishiyama K., Motogaito A., Miyake H., Iyechika Y., and Maeda T. Phys. Status Solidi A 176 (1999) 535
29. Sun Q., Yerino C.D., Ko T.S., Cho Y.S., Lee I.-H., Han J., and Coltrin M.E. J. Appl. Phys. 104 (2008) 093523
30. McLaurin M.B., Hirai A., Young E., Wu F., and Speck J.S. Jpn. J. Appl. Phys. 47 (2008) 5429
31. Shi B.M., Xie M.H., Wu H.S., Wang N., and Tong S.Y. Appl. Phys. Lett. 89 (2006) 151921