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Volumn 5, Issue 6, 2008, Pages 2234-2237
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Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates
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Author keywords
[No Author keywords available]
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Indexed keywords
BLUE-SHIFTED;
EMISSION PEAKS;
GAN TEMPLATE;
HIGH DRIVE CURRENT;
INGAN/GAN;
MOVPE;
SI SUBSTRATES;
TURN ON VOLTAGE;
COALESCENCE;
DIODES;
ELECTROLUMINESCENCE;
FABRICATION;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
LIGHT;
LIGHT EMISSION;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DIODES;
SILICON;
SUBSTRATES;
LIGHT EMITTING DIODES;
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EID: 65749111651
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200778642 Document Type: Conference Paper |
Times cited : (40)
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References (10)
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