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Volumn 5, Issue 6, 2008, Pages 2234-2237

Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates

Author keywords

[No Author keywords available]

Indexed keywords

BLUE-SHIFTED; EMISSION PEAKS; GAN TEMPLATE; HIGH DRIVE CURRENT; INGAN/GAN; MOVPE; SI SUBSTRATES; TURN ON VOLTAGE;

EID: 65749111651     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778642     Document Type: Conference Paper
Times cited : (40)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.