-
2
-
-
56549107714
-
Toward nanowire electronics
-
Appenzeller J, Knoch J, Bjork M T, Riel H, Schmid H and Riess W 2008 Toward nanowire electronics IEEE Trans. Electron Devices 55 2827-45
-
(2008)
IEEE Trans. Electron Devices
, vol.55
, pp. 2827-2845
-
-
Appenzeller, J.1
Knoch, J.2
Bjork, M.T.3
Riel, H.4
Schmid, H.5
Riess, W.6
-
3
-
-
0041823777
-
Nanowire-based very-high-frequency electromechanical resonator
-
Husain A, Hone J, Postma H W C, Huang X M H, Drake T, Barbic M, Scherer A and Roukes M L 2003 Nanowire-based very-high-frequency electromechanical resonator Appl. Phys. Lett. 83 1240-2
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 1240-1242
-
-
Husain, A.1
Hone, J.2
Postma, H.W.C.3
Huang, X.M.H.4
Drake, T.5
Barbic, M.6
Scherer, A.7
Roukes, M.L.8
-
4
-
-
38949169541
-
Bottom-up assembly of large-area nanowire resonator arrays
-
Li M, Bhiladvala R B, Morrow T J, Sioss J A, Lew K-K, Redwing J M, Keating C D and Mayer T S 2008 Bottom-up assembly of large-area nanowire resonator arrays Nat. Nano 3 88-92
-
(2008)
Nat. Nano
, vol.3
, pp. 88-92
-
-
Li, M.1
Bhiladvala, R.B.2
Morrow, T.J.3
Sioss, J.A.4
Lew, K.-K.5
Redwing, J.M.6
Keating, C.D.7
Mayer, T.S.8
-
5
-
-
33947190077
-
Nanowire-based nanoelectronic devices in the life sciences
-
Patolsky F, Timko B P, Zheng G and Lieber C M 2007 Nanowire-based nanoelectronic devices in the life sciences MRS Bull. 32 142-9
-
(2007)
MRS Bull.
, vol.32
, pp. 142-149
-
-
Patolsky, F.1
Timko, B.P.2
Zheng, G.3
Lieber, C.M.4
-
6
-
-
33751122778
-
Vapor-liquid-solid mechanism of single crystal growth
-
Wagner R S and Ellis W C 1964 Vapor-liquid-solid mechanism of single crystal growth Appl. Phys. Lett. 4 89-90
-
(1964)
Appl. Phys. Lett.
, vol.4
, pp. 89-90
-
-
Wagner, R.S.1
Ellis, W.C.2
-
7
-
-
18144431743
-
Failure of the vapor-liquid-solid mechanism in Au-assisted MOVPE growth of InAs nanowires
-
Dick K A, Deppert K, Martensson T, Mandl B, Samuelson L and Seifert W 2005 Failure of the vapor-liquid-solid mechanism in Au-assisted MOVPE growth of InAs nanowires Nano Lett. 5 761-4
-
(2005)
Nano Lett.
, vol.5
, pp. 761-764
-
-
Dick, K.A.1
Deppert, K.2
Martensson, T.3
Mandl, B.4
Samuelson, L.5
Seifert, W.6
-
8
-
-
50549104030
-
Epitaxial growth of silicon nanowires using an aluminium catalyst
-
Wang Y, Schmidt V, Senz S and Gosele U 2006 Epitaxial growth of silicon nanowires using an aluminium catalyst Nat. Nano 1 186-9
-
(2006)
Nat. Nano
, vol.1
, pp. 186-189
-
-
Wang, Y.1
Schmidt, V.2
Senz, S.3
Gosele, U.4
-
9
-
-
33751574532
-
Mechanism of branching and kinking during VLS crystal growth
-
Wagner R S and Ooherty C J 1968 Mechanism of branching and kinking during VLS crystal growth J. Electrochem. Soc. 115 93-9
-
(1968)
J. Electrochem. Soc.
, vol.115
, pp. 93-99
-
-
Wagner, R.S.1
Ooherty, C.J.2
-
10
-
-
0035831837
-
Diameter-controlled synthesis of single-crystal silicon nanowires
-
DOI 10.1063/1.1363692
-
Cui Y, Lauhon L J, Gudiksen M S, Wang J and Lieber C M 2001 Diameter-controlled synthesis of single-crystal silicon nanowires Appl. Phys. Lett. 78 2214-6 (Pubitemid 33600539)
-
(2001)
Applied Physics Letters
, vol.78
, Issue.15
, pp. 2214-2216
-
-
Cui, Y.1
Lauhon, L.J.2
Gudiksen, M.S.3
Wang, J.4
Lieber, C.M.5
-
11
-
-
0034639432
-
Laser-assisted catalytic growth of single crystal GaN nanowires
-
Duan X and Lieber C M 2000 Laser-assisted catalytic growth of single crystal GaN nanowires J. Am. Chem. Soc. 122 188-9
-
(2000)
J. Am. Chem. Soc.
, vol.122
, pp. 188-189
-
-
Duan, X.1
Lieber, C.M.2
-
12
-
-
0034712059
-
Control of thickness and orientation of solution-grown silicon nanowires
-
Holmes J D, Johnston K P, Doty R C and Korgel B A 2000 Control of thickness and orientation of solution-grown silicon nanowires Science 287 1471-3
-
(2000)
Science
, vol.287
, pp. 1471-1473
-
-
Holmes, J.D.1
Johnston, K.P.2
Doty, R.C.3
Korgel, B.A.4
-
13
-
-
0030165610
-
Self-organized growth of GaAs/InAs heterostructure nanocylinders by organometallic vapor phase epitaxy
-
Hiruma K, Murakoshi H, Yazawa M and Katsuyama T 1996 Self-organized growth of GaAs/InAs heterostructure nanocylinders by organometallic vapor phase epitaxy J. Cryst. Growth 163 226-31
-
(1996)
J. Cryst. Growth
, vol.163
, pp. 226-231
-
-
Hiruma, K.1
Murakoshi, H.2
Yazawa, M.3
Katsuyama, T.4
-
14
-
-
9944235378
-
Growth of one-dimensional nanostructures in MOVPE
-
Seifert W, et al. 2004 Growth of one-dimensional nanostructures in MOVPE J. Cryst. Growth 272 211-20
-
(2004)
J. Cryst. Growth
, vol.272
, pp. 211-220
-
-
Seifert, W.1
-
16
-
-
0036493103
-
Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures
-
Ohlsson B J, Bjork M T, Persson A I, Thelander C, Wallenberg L R, Magnusson M H, Deppert K and Samuelson L 2002 Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures Phys. E: Low-Dimensional Syst. Nanostructures 13 1126-30
-
(2002)
Phys. E: Low-Dimensional Syst. Nanostructures
, vol.13
, pp. 1126-1130
-
-
Ohlsson, B.J.1
Bjork, M.T.2
Persson, A.I.3
Thelander, C.4
Wallenberg, L.R.5
Magnusson, M.H.6
Deppert, K.7
Samuelson, L.8
-
17
-
-
0035851449
-
Size-, shape-, and position-controlled GaAs nano-whiskers
-
DOI 10.1063/1.1418446
-
Ohlsson B J, Bjork M T, Magnusson M H, Deppert K, Samuelson L and Wallenberg L R 2001 Size-, shape-, and position-controlled GaAs nano-whiskers Appl. Phys. Lett. 79 3335-7 (Pubitemid 33598741)
-
(2001)
Applied Physics Letters
, vol.79
, Issue.20
, pp. 3335-3337
-
-
Ohlsson, B.J.1
Bjork, M.T.2
Magnusson, M.H.3
Deppert, K.4
Samuelson, L.5
Wallenberg, L.R.6
-
18
-
-
33947251688
-
Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires
-
DOI 10.1016/j.physe.2006.07.002, PII S1386947706003754
-
Piccin M, et al. 2007 Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires Phys. E 37 134-7 (Pubitemid 46415678)
-
(2007)
Physica E: Low-Dimensional Systems and Nanostructures
, vol.37
, Issue.1-2
, pp. 134-137
-
-
Piccin, M.1
Bais, G.2
Grillo, V.3
Jabeen, F.4
De Franceschi, S.5
Carlino, E.6
Lazzarino, M.7
Romanato, F.8
Businaro, L.9
Rubini, S.10
Martelli, F.11
Franciosi, A.12
-
19
-
-
0242457283
-
Growth, branching, and kinking of molecular-beam epitaxial <1 1 0> GaAs nanowires
-
Wu Z H, Mei X, Kim D, Blumin M, Ruda H E, Liu J Q and Kavanagh K L 2003 Growth, branching, and kinking of molecular-beam epitaxial <1 1 0> GaAs nanowires Appl. Phys. Lett. 83 3368-70
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 3368-3370
-
-
Wu, Z.H.1
Mei, X.2
Kim, D.3
Blumin, M.4
Ruda, H.E.5
Liu, J.Q.6
Kavanagh, K.L.7
-
20
-
-
79955991177
-
One-dimensional heterostructures in semiconductor nanowhiskers
-
Bjork M T, Ohlsson B J, Sass T, Persson A I, Thelander C, Magnusson M H, Deppert K, Wallenberg L R and Samuelson L 2002 One-dimensional heterostructures in semiconductor nanowhiskers Appl. Phys. Lett. 80 1058-60
-
(2002)
Appl. Phys. Lett.
, vol.80
, pp. 1058-1060
-
-
Bjork, M.T.1
Ohlsson, B.J.2
Sass, T.3
Persson, A.I.4
Thelander, C.5
Magnusson, M.H.6
Deppert, K.7
Wallenberg, L.R.8
Samuelson, L.9
-
21
-
-
33748898542
-
Interface study on heterostructured GaP-GaAs nanowires
-
DOI 10.1088/0957-4484/17/16/002, PII S0957448406251717, 002
-
Borgstrom M T, Verheijen M A, Immink G, Smet T D and Bakkers E P A M 2006 Interface study on heterostructured GaP-GaAs nanowires Nanotechnology 17 4010-3 (Pubitemid 44424340)
-
(2006)
Nanotechnology
, vol.17
, Issue.16
, pp. 4010-4013
-
-
Borgstrom, M.T.1
Verheijen, M.A.2
Immink, G.3
De Smet, T.4
Bakkers, E.P.A.M.5
-
22
-
-
0037033988
-
Growth of nanowire superlattice structures for nanoscale photonics and electronics
-
Gudiksen M S, Lauhon L J, Wang J, Smith D C and Lieber C M 2002 Growth of nanowire superlattice structures for nanoscale photonics and electronics Nature 415 617-20
-
(2002)
Nature
, vol.415
, pp. 617-620
-
-
Gudiksen, M.S.1
Lauhon, L.J.2
Wang, J.3
Smith, D.C.4
Lieber, C.M.5
-
23
-
-
0002614758
-
Block-by-block growth of single-crystalline Si/SiGe superlattice nanowires
-
Wu Y, Fan R and Yang P 2002 Block-by-block growth of single-crystalline Si/SiGe superlattice nanowires Nano Lett. 2 83-6
-
(2002)
Nano Lett.
, vol.2
, pp. 83-86
-
-
Wu, Y.1
Fan, R.2
Yang, P.3
-
24
-
-
7644229875
-
Gallium nitride-based nanowire radial heterostructures for nanophotonics
-
Qian F, Li Y, Gradeak S, Wang D, Barrelet C J and Lieber C M 2004 Gallium nitride-based nanowire radial heterostructures for nanophotonics Nano Lett. 4 1975-9
-
(2004)
Nano Lett.
, vol.4
, pp. 1975-1979
-
-
Qian, F.1
Li, Y.2
Gradeak, S.3
Wang, D.4
Barrelet, C.J.5
Lieber, C.M.6
-
26
-
-
0037038368
-
Epitaxial core-shell and core-multishell nanowire heterostructures
-
Lauhon L J, Gudiksen M S, Wang D and Lieber C M 2002 Epitaxial core-shell and core-multishell nanowire heterostructures Nature 420 57-61
-
(2002)
Nature
, vol.420
, pp. 57-61
-
-
Lauhon, L.J.1
Gudiksen, M.S.2
Wang, D.3
Lieber, C.M.4
-
27
-
-
20544450530
-
Equilibrium limits of coherency in strained nanowire heterostructures
-
Ertekin E, Greaney P A, Chrzan D C and Sands T D 2005 Equilibrium limits of coherency in strained nanowire heterostructures J. Appl. Phys. 97 114325 (10pp)
-
(2005)
J. Appl. Phys.
, vol.97
, pp. 114325
-
-
Ertekin, E.1
Greaney, P.A.2
Chrzan, D.C.3
Sands, T.D.4
-
28
-
-
7544241259
-
Epitaxial III-V nanowires on silicon
-
Martensson T, Svensson C P T, Wacaser B A, Larsson M W, Seifert W, Deppert K, Gustafsson A, Wallenberg L R and Samuelson L 2004 Epitaxial III-V nanowires on silicon Nano Lett. 4 1987-90
-
(2004)
Nano Lett.
, vol.4
, pp. 1987-1990
-
-
Martensson, T.1
Svensson, C.P.T.2
Wacaser, B.A.3
Larsson, M.W.4
Seifert, W.5
Deppert, K.6
Gustafsson, A.7
Wallenberg, L.R.8
Samuelson, L.9
-
29
-
-
67649344282
-
GaAs MESFET with a high-mobility self-assembled planar nanowire channel
-
Fortuna S A and Li X 2009 GaAs MESFET with a high-mobility self-assembled planar nanowire channel IEEE Electron Device Lett. 30 593-5
-
(2009)
IEEE Electron Device Lett.
, vol.30
, pp. 593-595
-
-
Fortuna, S.A.1
Li, X.2
-
32
-
-
51849168992
-
Laser action in nanowires: Observation of the transition from amplified spontaneous emission to laser oscillation
-
Zimmler M A, Bao J, Capasso F, Muller S and Ronning C 2008 Laser action in nanowires: observation of the transition from amplified spontaneous emission to laser oscillation Appl. Phys. Lett. 93 051101-3
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 051101-051103
-
-
Zimmler, M.A.1
Bao, J.2
Capasso, F.3
Muller, S.4
Ronning, C.5
-
33
-
-
28344456271
-
GaN nanowire lasers with low lasing thresholds
-
Gradecak S, Qian F, Li Y, Park H-G and Lieber C M 2005 GaN nanowire lasers with low lasing thresholds Appl. Phys. Lett. 87 173111 (3 pp)
-
(2005)
Appl. Phys. Lett.
, vol.87
, pp. 173111
-
-
Gradecak, S.1
Qian, F.2
Li, Y.3
Park, H.-G.4
Lieber, C.M.5
-
34
-
-
0035827304
-
Room-temperature ultraviolet nanowire nanolasers
-
Huang M H, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo R and Yang P 2001 Room-temperature ultraviolet nanowire nanolasers Science 292 1897-9
-
(2001)
Science
, vol.292
, pp. 1897-1899
-
-
Huang, M.H.1
Mao, S.2
Feick, H.3
Yan, H.4
Wu, Y.5
Kind, H.6
Weber, E.7
Russo, R.8
Yang, P.9
-
35
-
-
33847712282
-
Single quantum dot nanowire LEDs
-
Minot E D, Kelkensberg F, vanKouwen M, vanDam J A, Kouwenhoven L P, Zwiller V, Borgstrom M T, Wunnicke O, Verheijen M A and Bakkers E P A M 2007 Single quantum dot nanowire LEDs Nano Lett. 7 367-71
-
(2007)
Nano Lett.
, vol.7
, pp. 367-371
-
-
Minot, E.D.1
Kelkensberg, F.2
Vankouwen, M.3
Vandam, J.A.4
Kouwenhoven, L.P.5
Zwiller, V.6
Borgstrom, M.T.7
Wunnicke, O.8
Verheijen, M.A.9
Bakkers, E.P.A.M.10
-
36
-
-
28144437037
-
Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes
-
Qian F, Gradecak S, Li Y, Wen C Y and Lieber C M 2005 Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes Nano Lett. 5 2287-91
-
(2005)
Nano Lett.
, vol.5
, pp. 2287-2291
-
-
Qian, F.1
Gradecak, S.2
Li, Y.3
Wen, C.Y.4
Lieber, C.M.5
-
37
-
-
47249112911
-
Monolithic GaAs/InGaP nanowire light emitting diodes on silicon
-
Svensson C P T, Mrtensson T, Trägrdh J, Larsson C, Rask M, Hessman D, Samuelson L and Ohlsson J 2008 Monolithic GaAs/InGaP nanowire light emitting diodes on silicon Nanotechnology 19 305201
-
(2008)
Nanotechnology
, vol.19
, pp. 305201
-
-
Svensson, C.P.T.1
Mrtensson, T.2
Trägrdh, J.3
Larsson, C.4
Rask, M.5
Hessman, D.6
Samuelson, L.7
Ohlsson, J.8
-
38
-
-
33646492021
-
Nanoscale avalanche photodiodes for highly sensitive and spatially resolved photon detection
-
Hayden O, Agarwal R and Lieber C M 2006 Nanoscale avalanche photodiodes for highly sensitive and spatially resolved photon detection Nat. Mater. 5 352-6
-
(2006)
Nat. Mater.
, vol.5
, pp. 352-356
-
-
Hayden, O.1
Agarwal, R.2
Lieber, C.M.3
-
39
-
-
33644914252
-
Infrared photodetectors in heterostructure nanowires
-
Pettersson H, Tragardh J, Persson A I, Landin L, Hessman D and Samuelson L 2006 Infrared photodetectors in heterostructure nanowires Nano Lett. 6 229-32
-
(2006)
Nano Lett.
, vol.6
, pp. 229-232
-
-
Pettersson, H.1
Tragardh, J.2
Persson, A.I.3
Landin, L.4
Hessman, D.5
Samuelson, L.6
-
40
-
-
34248140089
-
ZnO Nanowire UV photodetectors with high internal gain
-
Soci C, Zhang A, Xiang B, Dayeh S A, Aplin D P R, Park J, Bao X Y, Lo Y H and Wang D 2007 ZnO Nanowire UV photodetectors with high internal gain Nano Lett. 7 1003-9
-
(2007)
Nano Lett.
, vol.7
, pp. 1003-1009
-
-
Soci, C.1
Zhang, A.2
Xiang, B.3
Dayeh, S.A.4
Aplin, D.P.R.5
Park, J.6
Bao, X.Y.7
Lo, Y.H.8
Wang, D.9
-
42
-
-
40449090496
-
Photovoltaic measurements in single-nanowire silicon solar cells
-
Kelzenberg M D, Turner-Evans D B, Kayes B M, Filler M A, Putnam M C, Lewis N S and Atwater H A 2008 Photovoltaic measurements in single-nanowire silicon solar cells Nano Lett. 8 710-4
-
(2008)
Nano Lett.
, vol.8
, pp. 710-714
-
-
Kelzenberg, M.D.1
Turner-Evans, D.B.2
Kayes, B.M.3
Filler, M.A.4
Putnam, M.C.5
Lewis, N.S.6
Atwater, H.A.7
-
44
-
-
0035398186
-
Diffusion and incorporation: Shape evolution during overgrowth on structured substrates
-
Braun W, Kaganer V M, Trampert A, Schönherr H-P, Gong Q, Nötzel R, Däweritz L and Ploog K H 2001 Diffusion and incorporation: shape evolution during overgrowth on structured substrates J. Cryst. Growth 227-228 51-5
-
(2001)
J. Cryst. Growth
, vol.227-228
, pp. 51-55
-
-
Braun, W.1
Kaganer, V.M.2
Trampert, A.3
Schönherr, H.-P.4
Gong, Q.5
Nötzel, R.6
Däweritz, L.7
Ploog, K.H.8
-
45
-
-
33344462077
-
Growth and optical properties of nanometer-scale GaAs and InAs whiskers
-
Hiruma K, Yazawa M, Katsuyama T, Ogawa K, Haraguchi K, Koguchi M and Kakibayashi H 1995 Growth and optical properties of nanometer-scale GaAs and InAs whiskers J. Appl. Phys. 77 447-62
-
(1995)
J. Appl. Phys.
, vol.77
, pp. 447-462
-
-
Hiruma, K.1
Yazawa, M.2
Katsuyama, T.3
Ogawa, K.4
Haraguchi, K.5
Koguchi, M.6
Kakibayashi, H.7
-
46
-
-
48249145188
-
On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity
-
Chen R-S, Wang S-W, Lan Z-H, Tsai J T-H, Wu C-T, Chen L-C, Chen K-H, Huang Y-S and Chen C-C 2008 On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity Small 4 925-9
-
(2008)
Small
, vol.4
, pp. 925-929
-
-
Chen, R.-S.1
Wang, S.-W.2
Lan, Z.-H.3
Tsai, J.T.-H.4
Wu, C.-T.5
Chen, L.-C.6
Chen, K.-H.7
Huang, Y.-S.8
Chen, C.-C.9
-
47
-
-
3342920063
-
Crystallographic alignment of high-density gallium nitride nanowire arrays
-
Kuykendall T, Pauzauskie P J, Zhang Y, Goldberger J, Sirbuly D, Denlinger J and Yang P 2004 Crystallographic alignment of high-density gallium nitride nanowire arrays Nat. Mater. 3 524-8
-
(2004)
Nat. Mater.
, vol.3
, pp. 524-528
-
-
Kuykendall, T.1
Pauzauskie, P.J.2
Zhang, Y.3
Goldberger, J.4
Sirbuly, D.5
Denlinger, J.6
Yang, P.7
-
49
-
-
0347654987
-
Fabrication of individually seeded nanowire arrays by vapour-liquid-solid growth
-
Martensson T, Borgstrom M, Seifert W, Ohlsson B J and Samuelson L 2003 Fabrication of individually seeded nanowire arrays by vapour-liquid-solid growth Nanotechnology 14 1255-8
-
(2003)
Nanotechnology
, vol.14
, pp. 1255-1258
-
-
Martensson, T.1
Borgstrom, M.2
Seifert, W.3
Ohlsson, B.J.4
Samuelson, L.5
-
50
-
-
26944433744
-
Structures and energetics of hydrogen-terminated silicon nanowire surfaces
-
Zhang R Q, Lifshitz Y, Ma D D D, Zhao Y L, Frauenheim T, Lee S T and Tong S Y 2005 Structures and energetics of hydrogen-terminated silicon nanowire surfaces J. Chem. Phys. 123 144703-5
-
(2005)
J. Chem. Phys.
, vol.123
, pp. 144703-144705
-
-
Zhang, R.Q.1
Lifshitz, Y.2
Ma, D.D.D.3
Zhao, Y.L.4
Frauenheim, T.5
Lee, S.T.6
Tong, S.Y.7
-
51
-
-
0037912948
-
Growth of silicon nanowires via gold/silane vapor-liquid-solid reaction
-
Westwater J, Gosain D P, Tomiya S, Usui S and Ruda H 1997 Growth of silicon nanowires via gold/silane vapor-liquid-solid reaction J. Vac. Sci. Technol. B 15 554-7
-
(1997)
J. Vac. Sci. Technol.
, vol.15
, pp. 554-557
-
-
Westwater, J.1
Gosain, D.P.2
Tomiya, S.3
Usui, S.4
Ruda, H.5
-
52
-
-
19944379818
-
Diameter-dependent growth direction of epitaxial silicon nanowires
-
Schmidt V, Senz S and Gosele U 2005 Diameter-dependent growth direction of epitaxial silicon nanowires Nano Lett. 5 931-5
-
(2005)
Nano Lett.
, vol.5
, pp. 931-935
-
-
Schmidt, V.1
Senz, S.2
Gosele, U.3
-
53
-
-
1642528452
-
Controlled growth and structures of molecular-scale silicon nanowires
-
Wu Y, Cui Y, Huynh L, Barrelet C J, Bell D C and Lieber C M 2004 Controlled growth and structures of molecular-scale silicon nanowires Nano Lett. 4 433-6
-
(2004)
Nano Lett.
, vol.4
, pp. 433-436
-
-
Wu, Y.1
Cui, Y.2
Huynh, L.3
Barrelet, C.J.4
Bell, D.C.5
Lieber, C.M.6
-
54
-
-
59549097635
-
Pressure-induced orientation control of the growth of epitaxial silicon nanowires
-
Lugstein A, Steinmair M, Hyun Y J, Hauer G, Pongratz P and Bertagnolli E 2008 Pressure-induced orientation control of the growth of epitaxial silicon nanowires Nano Lett. 8 2310-4
-
(2008)
Nano Lett.
, vol.8
, pp. 2310-2314
-
-
Lugstein, A.1
Steinmair, M.2
Hyun, Y.J.3
Hauer, G.4
Pongratz, P.5
Bertagnolli, E.6
-
55
-
-
0038187633
-
Growth direction and cross-sectional study of silicon nanowires
-
Li C P, Lee C S, Ma X L, Wang N, Zhang R Q and Lee S T 2003 Growth direction and cross-sectional study of silicon nanowires Adv. Mater. 15 607-9
-
(2003)
Adv. Mater.
, vol.15
, pp. 607-609
-
-
Li, C.P.1
Lee, C.S.2
Ma, X.L.3
Wang, N.4
Zhang, R.Q.5
Lee, S.T.6
-
56
-
-
24644476201
-
Crystallography and surface faceting of germanium nanowires
-
Hanrath T and Korgel B A 2005 Crystallography and surface faceting of germanium nanowires Small 1 717-21
-
(2005)
Small
, vol.1
, pp. 717-721
-
-
Hanrath, T.1
Korgel, B.A.2
-
57
-
-
33744546661
-
Nanowire growth and dopants studied by cross-sectional scanning tunnelling microscopy
-
Mikkelsen A, Sköld N, Ouattara L and Lundgren E 2006 Nanowire growth and dopants studied by cross-sectional scanning tunnelling microscopy Nanotechnology 17 S362-S8-S-S8
-
(2006)
Nanotechnology
, vol.17
-
-
Mikkelsen, A.1
Sköld, N.2
Ouattara, L.3
Lundgren, E.4
-
58
-
-
61649126465
-
Planar GaAs nanowires on GaAs (1 0 0) substrates: Self-aligned, nearly twin-defect free, and transfer-printable
-
Fortuna S A, Wen J, Chun I S and Li X 2008 Planar GaAs nanowires on GaAs (1 0 0) substrates: self-aligned, nearly twin-defect free, and transfer-printable Nano Lett. 8 4421-7
-
(2008)
Nano Lett.
, vol.8
, pp. 4421-4427
-
-
Fortuna, S.A.1
Wen, J.2
Chun, I.S.3
Li, X.4
-
59
-
-
65449141752
-
The effect of GaAs(1 0 0) surface preparation on the growth of nanowires
-
Ghosh S C, Kruse P and LaPierre R R 2009 The effect of GaAs(1 0 0) surface preparation on the growth of nanowires Nanotechnology 20 115602-
-
(2009)
Nanotechnology
, vol.20
-
-
Ghosh, S.C.1
Kruse, P.2
Lapierre, R.R.3
-
60
-
-
0010911965
-
Fundamental aspects of VLS growth
-
Givargizov E I 1975 Fundamental aspects of VLS growth J. Cryst. Growth 31 20-30
-
(1975)
J. Cryst. Growth
, vol.31
, pp. 20-30
-
-
Givargizov, E.I.1
-
61
-
-
34249079430
-
Growth of GaAs nanowires on Si substrates using a molecular beam epitaxy
-
Soo-Ghang I, Jong-In S, Young-Hun K, Jeong Yong L and Il-Ho A 2007 Growth of GaAs nanowires on Si substrates using a molecular beam epitaxy IEEE Trans., Nanotechnol. 6 384-9
-
(2007)
IEEE Trans., Nanotechnol.
, vol.6
, pp. 384-389
-
-
Soo-Ghang, I.1
Jong-In, S.2
Young-Hun, K.3
Jeong Yong, L.4
Il-Ho, A.5
-
62
-
-
30344485981
-
Growth and characterization of defect free GaAs nanowires
-
Wacaser B A, Deppert K, Karlsson L S, Samuelson L and Seifert W 2006 Growth and characterization of defect free GaAs nanowires J. Cryst. Growth 287 504-8
-
(2006)
J. Cryst. Growth
, vol.287
, pp. 504-508
-
-
Wacaser, B.A.1
Deppert, K.2
Karlsson, L.S.3
Samuelson, L.4
Seifert, W.5
-
63
-
-
0035804248
-
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
-
DOI 10.1038/35051047
-
Duan X, Huang Y, Cui Y, Wang J and Lieber C M 2001 Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices Nature 409 66-9 (Pubitemid 32098623)
-
(2001)
Nature
, vol.409
, Issue.6816
, pp. 66-69
-
-
Duan, X.1
Huang, Y.2
Cui, Y.3
Wang, J.4
Lieber, C.M.5
-
64
-
-
33947372110
-
Effect of substrate orientation on the catalyst-free growth of InP nanowires
-
Mattila M, Hakkarainen T, Jiang H, Kauppinen E I and Lipsanen H 2007 Effect of substrate orientation on the catalyst-free growth of InP nanowires Nanotechnology 18 155301
-
(2007)
Nanotechnology
, vol.18
, pp. 155301
-
-
Mattila, M.1
Hakkarainen, T.2
Jiang, H.3
Kauppinen, E.I.4
Lipsanen, H.5
-
65
-
-
5444234721
-
Defect-free InP nanowires grown in [0 0 1] direction on InP (0 0 1)
-
Krishnamachari U, Borgstrom M, Ohlsson B J, Panev N, Samuelson L, Seifert W, Larsson M W and Wallenberg L R 2004 Defect-free InP nanowires grown in [0 0 1] direction on InP (0 0 1) Appl. Phys. Lett. 85 2077-9
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 2077-2079
-
-
Krishnamachari, U.1
Borgstrom, M.2
Ohlsson, B.J.3
Panev, N.4
Samuelson, L.5
Seifert, W.6
Larsson, M.W.7
Wallenberg, L.R.8
-
66
-
-
60849087344
-
Evolution of epitaxial InAs nanowires on GaAs (1 1 1)B
-
Zhang X, Zou J, Paladugu M, Guo Y, Wang Y, Kim Y, Joyce H J, Gao Q, Tan H H and Jagadish C 2009 Evolution of epitaxial InAs nanowires on GaAs (1 1 1)B Small 5 366-9
-
(2009)
Small
, vol.5
, pp. 366-369
-
-
Zhang, X.1
Zou, J.2
Paladugu, M.3
Guo, Y.4
Wang, Y.5
Kim, Y.6
Joyce, H.J.7
Gao, Q.8
Tan, H.H.9
Jagadish, C.10
-
67
-
-
0035126240
-
Catalytic growth of zinc oxide nanowires by vapor transport
-
Huang M H, Wu Y, Feick H, Tran N, Weber E and Yang P 2001 Catalytic growth of zinc oxide nanowires by vapor transport Adv. Mater. 13 113-6
-
(2001)
Adv. Mater.
, vol.13
, pp. 113-116
-
-
Huang, M.H.1
Wu, Y.2
Feick, H.3
Tran, N.4
Weber, E.5
Yang, P.6
-
68
-
-
0036575748
-
Controlled growth of ZnO nanowires and their optical properties
-
Yang P, Yan H, Mao S, Russo R, Johnson J, Saykally R, Morris N, Pham J, He R and Choi H J 2002 Controlled growth of ZnO nanowires and their optical properties Adv. Funct. Mater. 12 323-31
-
(2002)
Adv. Funct. Mater.
, vol.12
, pp. 323-331
-
-
Yang, P.1
Yan, H.2
Mao, S.3
Russo, R.4
Johnson, J.5
Saykally, R.6
Morris, N.7
Pham, J.8
He, R.9
Choi, H.J.10
-
69
-
-
12344266552
-
Large hexagonal arrays of aligned ZnO nanorods
-
Banerjee D, Rybczynski J, Huang J Y, Wang D Z, Kempa K and Ren Z F 2005 Large hexagonal arrays of aligned ZnO nanorods Appl. Phys. A 80 749-52
-
(2005)
Appl. Phys.
, vol.80
, pp. 749-752
-
-
Banerjee, D.1
Rybczynski, J.2
Huang, J.Y.3
Wang, D.Z.4
Kempa, K.5
Ren, Z.F.6
-
71
-
-
0038137285
-
Single gallium nitride nanowire lasers
-
Johnson J C, Choi H-J, Knutsen K P, Schaller R D, Yang P and Saykally R J 2002 Single gallium nitride nanowire lasers Nat. Mater. 1 106-10
-
(2002)
Nat. Mater.
, vol.1
, pp. 106-110
-
-
Johnson, J.C.1
Choi, H.-J.2
Knutsen, K.P.3
Schaller, R.D.4
Yang, P.5
Saykally, R.J.6
-
72
-
-
0001606308
-
3
-
3 Appl. Phys. Lett. 77 3731-3
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 3731-3733
-
-
He, M.1
Minus, I.2
Zhou, P.3
Mohammed, S.N.4
Halpern, J.B.5
Jacobs, R.6
Sarney, W.L.7
Salamanca-Riba, L.8
Vispute, R.D.9
-
73
-
-
0034805449
-
Catalytic growth and characterization of gallium nitride nanowires
-
Chen C-C, Yeh C-C, Chen C-H, Yu M-Y, Liu H-L, Wu J-J, Chen K-H, Chen L-C, Peng J-Y and Chen Y-F 2001 Catalytic growth and characterization of gallium nitride nanowires J. Am. Chem. Soc. 123 2791-8
-
(2001)
J. Am. Chem. Soc.
, vol.123
, pp. 2791-2798
-
-
Chen, C.-C.1
Yeh, C.-C.2
Chen, C.-H.3
Yu, M.-Y.4
Liu, H.-L.5
Wu, J.-J.6
Chen, K.-H.7
Chen, L.-C.8
Peng, J.-Y.9
Chen, Y.-F.10
-
75
-
-
48049098755
-
The role of collisions in the aligned growth of vertical nanowires
-
Li Q, Creighton J R and Wang G T 2008 The role of collisions in the aligned growth of vertical nanowires J. Cryst. Growth 310 3706-9
-
(2008)
J. Cryst. Growth
, vol.310
, pp. 3706-3709
-
-
Li, Q.1
Creighton, J.R.2
Wang, G.T.3
-
76
-
-
0142075255
-
Metalorganic chemical vapor deposition route to GaN nanowires with triangular cross sections
-
Kuykendall T, Pauzauskie P, Lee S, Zhang Y, Goldberger J and Yang P 2003 Metalorganic chemical vapor deposition route to GaN nanowires with triangular cross sections Nano Lett. 3 1063-6
-
(2003)
Nano Lett.
, vol.3
, pp. 1063-1066
-
-
Kuykendall, T.1
Pauzauskie, P.2
Lee, S.3
Zhang, Y.4
Goldberger, J.5
Yang, P.6
-
78
-
-
9644283361
-
Semiconductor nanowires for 0D and 1D physics and applications
-
Samuelson L, et al. 2004 Semiconductor nanowires for 0D and 1D physics and applications Phys. E 25 313-8
-
(2004)
Phys. E
, vol.25
, pp. 313-318
-
-
Samuelson, L.1
-
79
-
-
2342530489
-
Nanowire arrays defined by nanoimprint lithography
-
Martensson T, Carlberg P, Borgstrom M, Montelius L, Seifert W and Samuelson L 2004 Nanowire arrays defined by nanoimprint lithography Nano Lett. 4 699-702
-
(2004)
Nano Lett.
, vol.4
, pp. 699-702
-
-
Martensson, T.1
Carlberg, P.2
Borgstrom, M.3
Montelius, L.4
Seifert, W.5
Samuelson, L.6
-
80
-
-
33746821792
-
Nature of germanium nanowire heteroepitaxy on silicon substrates
-
Jagannathan H, Deal M, Nishi Y, Woodruff J, Chidsey C and McIntyre P C 2006 Nature of germanium nanowire heteroepitaxy on silicon substrates J. Appl. Phys. 100 024318-10
-
(2006)
J. Appl. Phys.
, vol.100
, pp. 024318-024310
-
-
Jagannathan, H.1
Deal, M.2
Nishi, Y.3
Woodruff, J.4
Chidsey, C.5
McIntyre, P.C.6
-
81
-
-
33846864673
-
Morphology- and orientation-controlled gallium arsenide nanowires on silicon substrates
-
Ihn S-G, Song J-I, Kim T-W, Leem D-S, Lee T, Lee S-G, Koh E K and Song K 2007 Morphology- and orientation-controlled gallium arsenide nanowires on silicon substrates Nano Lett. 7 39-44
-
(2007)
Nano Lett.
, vol.7
, pp. 39-44
-
-
Ihn, S.-G.1
Song, J.-I.2
Kim, T.-W.3
Leem, D.-S.4
Lee, T.5
Lee, S.-G.6
Koh, E.K.7
Song, K.8
-
82
-
-
33744522164
-
Position-controlled epitaxial III-V nanowires on silicon
-
Roest A L, Verheijen M A, Wunnicke O, Serafin S, Wondergem H and Bakkers E P A M 2006 Position-controlled epitaxial III-V nanowires on silicon Nanotechnology 17 S271-S5-S-S5
-
(2006)
Nanotechnology
, vol.17
-
-
Roest, A.L.1
Verheijen, M.A.2
Wunnicke, O.3
Serafin, S.4
Wondergem, H.5
Bakkers, E.P.A.M.6
-
83
-
-
76749159492
-
Low-temperature wafer-scale production of ZnO nanowire arrays
-
Greene L E, Matt L, Joshua G, Franklin K, Justin C J, Yanfeng Z, Richard J S and Peidong Y 2003 Low-temperature wafer-scale production of ZnO nanowire arrays ChemInform 34
-
(2003)
ChemInform
, vol.34
-
-
Greene, L.E.1
Matt, L.2
Joshua, G.3
Franklin, K.4
Justin, C.J.5
Yanfeng, Z.6
Richard, J.S.7
Peidong, Y.8
-
84
-
-
33846615095
-
Critical diameter for III-V nanowires grown on lattice-mismatched substrates
-
Chuang L C, Moewe M, Chase C, Kobayashi N P, Chang-Hasnain C and Crankshaw S 2007 Critical diameter for III-V nanowires grown on lattice-mismatched substrates Appl. Phys. Lett. 90 043115-3
-
(2007)
Appl. Phys. Lett.
, vol.90
, pp. 043115-043113
-
-
Chuang, L.C.1
Moewe, M.2
Chase, C.3
Kobayashi, N.P.4
Chang-Hasnain, C.5
Crankshaw, S.6
-
85
-
-
33947138803
-
Epitaxial growth of III-V nanowires on group IV substrates
-
Bakkers E P A M, Borgstrom M T and Verheijen M A 2007 Epitaxial growth of III-V nanowires on group IV substrates MRS Bull. 32 117-22
-
(2007)
MRS Bull.
, vol.32
, pp. 117-122
-
-
Bakkers, E.P.A.M.1
Borgstrom, M.T.2
Verheijen, M.A.3
-
86
-
-
42549155307
-
Vertically standing Ge nanowires on GaAs(1 1 0) substrates
-
Song M S, Jung J H, Kim Y, Wang Y, Zou J, Joyce H J, Gao Q, Tan H H and Jagadish C 2008 Vertically standing Ge nanowires on GaAs(1 1 0) substrates Nanotechnology 19 125602-
-
(2008)
Nanotechnology
, vol.19
-
-
Song, M.S.1
Jung, J.H.2
Kim, Y.3
Wang, Y.4
Zou, J.5
Joyce, H.J.6
Gao, Q.7
Tan, H.H.8
Jagadish, C.9
-
87
-
-
16544366658
-
Epitaxial growth of InP nanowires on germanium
-
Bakkers E P A M, van Dam J A, De Franceschi S, Kouwenhoven L P, Kaiser M, Verheijen M, Wondergem H and Van Der Sluis P 2004 Epitaxial growth of InP nanowires on germanium Nat. Mater. 3 769-73
-
(2004)
Nat. Mater.
, vol.3
, pp. 769-773
-
-
Bakkers, E.P.A.M.1
Van Dam, J.A.2
De Franceschi, S.3
Kouwenhoven, L.P.4
Kaiser, M.5
Verheijen, M.6
Wondergem, H.7
Van Der Sluis, P.8
-
88
-
-
56849112634
-
Heteroepitaxial growth of vertical GaAs nanowires on Si (1 1 1) substrates by metal-organic chemical vapor deposition
-
Bao X-Y, Soci C, Susac D, Bratvold J, Aplin D P R, Wei W, Chen C-Y, Dayeh S A, Kavanagh K L and Wang D 2008 Heteroepitaxial growth of vertical GaAs nanowires on Si (1 1 1) substrates by metal-organic chemical vapor deposition Nano Lett. 8 3755-60
-
(2008)
Nano Lett.
, vol.8
, pp. 3755-3760
-
-
Bao, X.-Y.1
Soci, C.2
Susac, D.3
Bratvold, J.4
Aplin, D.P.R.5
Wei, W.6
Chen, C.-Y.7
Dayeh, S.A.8
Kavanagh, K.L.9
Wang, D.10
-
89
-
-
61449266459
-
Influence of indium and phosphine on Au-catalyzed InP nanowire growth on Si substrates
-
Boles S T, Thompson C V and Fitzgerald E A 2009 Influence of indium and phosphine on Au-catalyzed InP nanowire growth on Si substrates J. Cryst. Growth 311 1446-50
-
(2009)
J. Cryst. Growth
, vol.311
, pp. 1446-1450
-
-
Boles, S.T.1
Thompson, C.V.2
Fitzgerald, E.A.3
-
90
-
-
61649122131
-
Control of GaP and GaAs nanowire morphology through particle and substrate chemical modification
-
Dick K A, Deppert K, Samuelson L, Wallenberg L R and Ross F M 2008 Control of GaP and GaAs nanowire morphology through particle and substrate chemical modification Nano Lett. 8 4087-91
-
(2008)
Nano Lett.
, vol.8
, pp. 4087-4091
-
-
Dick, K.A.1
Deppert, K.2
Samuelson, L.3
Wallenberg, L.R.4
Ross, F.M.5
-
91
-
-
33846107443
-
Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal-organic chemical vapour deposition
-
Wang G T, Talin A A, Werder D J, Creighton J R, Lai E, Anderson R J and Arslan I 2006 Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal-organic chemical vapour deposition Nanotechnology 17 5773-80
-
(2006)
Nanotechnology
, vol.17
, pp. 5773-5780
-
-
Wang, G.T.1
Talin, A.A.2
Werder, D.J.3
Creighton, J.R.4
Lai, E.5
Anderson, R.J.6
Arslan, I.7
-
92
-
-
61649113958
-
Modal characteristics in a single-nanowire cavity with a triangular cross section
-
Seo M-K, Yang J-K, Jeong K-Y, Park H-G, Qian F, Ee H-S, No Y-S and Lee Y-H 2008 Modal characteristics in a single-nanowire cavity with a triangular cross section Nano Lett. 8 4534-8
-
(2008)
Nano Lett.
, vol.8
, pp. 4534-4538
-
-
Seo, M.-K.1
Yang, J.-K.2
Jeong, K.-Y.3
Park, H.-G.4
Qian, F.5
Ee, H.-S.6
No, Y.-S.7
Lee, Y.-H.8
-
93
-
-
25444436440
-
The influence of lysine on InP(0 0 1) surface ordering and nanowire growth
-
Mikkelsen A, Eriksson J, Lundgren E, Andersen J N, Weissenreider J and Seifert W 2005 The influence of lysine on InP(0 0 1) surface ordering and nanowire growth Nanotechnology 16 2354-9
-
(2005)
Nanotechnology
, vol.16
, pp. 2354-2359
-
-
Mikkelsen, A.1
Eriksson, J.2
Lundgren, E.3
Andersen, J.N.4
Weissenreider, J.5
Seifert, W.6
-
94
-
-
33846310091
-
Temperature-dependent growth direction of ultrathin ZnSe nanowires13
-
Cai Y, Chan S K, Sou I K, Chan Y F, Su D S and Wang N 2007 Temperature-dependent growth direction of ultrathin ZnSe nanowires13 Small 3 111-5
-
(2007)
Small
, vol.3
, pp. 111-115
-
-
Cai, Y.1
Chan, S.K.2
Sou, I.K.3
Chan, Y.F.4
Su, D.S.5
Wang, N.6
-
95
-
-
0036120861
-
Template-directed vapor-liquid-solid growth of silicon nanowires
-
Lew K-K, Reuther C, Carim A H, Redwing J M and Martin B R 2002 Template-directed vapor-liquid-solid growth of silicon nanowires J. Vac. Sci. Technol. B 20 389-92
-
(2002)
J. Vac. Sci. Technol.
, vol.20
, pp. 389-392
-
-
Lew, K.-K.1
Reuther, C.2
Carim, A.H.3
Redwing, J.M.4
Martin, B.R.5
-
96
-
-
0742269370
-
Direct synthesis of single-crystalline silicon nanowires using molten gallium and silane plasma
-
Sharma S and Sunkara M K 2004 Direct synthesis of single-crystalline silicon nanowires using molten gallium and silane plasma Nanotechnology 15 130-4
-
(2004)
Nanotechnology
, vol.15
, pp. 130-134
-
-
Sharma, S.1
Sunkara, M.K.2
-
97
-
-
0001408131
-
Silicon nanowhiskers grown on a hydrogen-terminated silicon {1 1 1} surface
-
Ozaki N, Ohno Y and Takeda S 1998 Silicon nanowhiskers grown on a hydrogen-terminated silicon {1 1 1} surface Appl. Phys. Lett. 73 3700-2
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 3700-3702
-
-
Ozaki, N.1
Ohno, Y.2
Takeda, S.3
-
98
-
-
0037459371
-
Small-diameter silicon nanowire surfaces
-
Ma D D D, Lee C S, Au F C K, Tong S Y and Lee S T 2003 Small-diameter silicon nanowire surfaces Science 299 1874-7
-
(2003)
Science
, vol.299
, pp. 1874-1877
-
-
Ma, D.D.D.1
Lee, C.S.2
Au, F.C.K.3
Tong, S.Y.4
Lee, S.T.5
-
99
-
-
0346782277
-
Morphology of silicon whiskers grown by the VLS-technique
-
Givargizov E I and Sheftal N N 1971 Morphology of silicon whiskers grown by the VLS-technique J. Cryst. Growth 9 326-9
-
(1971)
J. Cryst. Growth
, vol.9
, pp. 326-329
-
-
Givargizov, E.I.1
Sheftal, N.N.2
-
100
-
-
35349027862
-
Growth and electrical characteristics of platinum-nanoparticle-catalyzed silicon nanowires
-
Garnett E C, Liang W and Yang P 2007 Growth and electrical characteristics of platinum-nanoparticle-catalyzed silicon nanowires Adv. Mater. 19 2946-50
-
(2007)
Adv. Mater.
, vol.19
, pp. 2946-2950
-
-
Garnett, E.C.1
Liang, W.2
Yang, P.3
-
102
-
-
61649087175
-
A universal expression of band gap for silicon nanowires of different cross-section geometries
-
Yao D, Zhang G and Li B 2008 A universal expression of band gap for silicon nanowires of different cross-section geometries Nano Lett. 8 4557-61
-
(2008)
Nano Lett.
, vol.8
, pp. 4557-4561
-
-
Yao, D.1
Zhang, G.2
Li, B.3
-
103
-
-
38649110176
-
Unique electronic band structures of hydrogen-terminated〈1 1 2〉 silicon nanowires
-
Lu A J, Zhang R Q and Lee S T 2008 Unique electronic band structures of hydrogen-terminated〈1 1 2〉 silicon nanowires Nanotechnology 19 035708-
-
(2008)
Nanotechnology
, vol.19
-
-
Lu, A.J.1
Zhang, R.Q.2
Lee, S.T.3
-
104
-
-
3242701624
-
Quantum confinement and electronic properties of silicon nanowires
-
Zhao X, Wei C M, Yang L and Chou M Y 2004 Quantum confinement and electronic properties of silicon nanowires Phys. Rev. Lett. 92 236805
-
(2004)
Phys. Rev. Lett.
, vol.92
, pp. 236805
-
-
Zhao, X.1
Wei, C.M.2
Yang, L.3
Chou, M.Y.4
-
105
-
-
55149098990
-
Indirect-to-direct band gap transitions in phosphorus adsorbed 〈1 1 2〉 silicon nanowires
-
Yang X B and Zhang R Q 2008 Indirect-to-direct band gap transitions in phosphorus adsorbed 〈1 1 2〉 silicon nanowires Appl. Phys. Lett. 93 173108-3
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 173108-173103
-
-
Yang, X.B.1
Zhang, R.Q.2
-
106
-
-
44349106438
-
Tunable electronic band structures of hydrogen-terminated 〈1 1 2〉 silicon nanowires
-
Lu A J, Zhang R Q and Lee S T 2008 Tunable electronic band structures of hydrogen-terminated 〈1 1 2〉 silicon nanowires Appl. Phys. Lett. 92 203109-3
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 203109-203103
-
-
Lu, A.J.1
Zhang, R.Q.2
Lee, S.T.3
-
108
-
-
0142120586
-
ZnSe nanowires epitaxially grown on GaP(1 1 1) substrates by molecular-beam epitaxy
-
Chan Y F, Duan X F, Chan S K, Sou I K, Zhang X X and Wang N 2003 ZnSe nanowires epitaxially grown on GaP(1 1 1) substrates by molecular-beam epitaxy Appl. Phys. Lett. 83 2665-7
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 2665-2667
-
-
Chan, Y.F.1
Duan, X.F.2
Chan, S.K.3
Sou, I.K.4
Zhang, X.X.5
Wang, N.6
-
109
-
-
30444461078
-
The size-dependent growth direction of ZnSe nanowires
-
Cai Y, Chan S K, Sou I K, Chan Y F, Su D S and Wang N 2006 The size-dependent growth direction of ZnSe nanowires Adv. Mater. 18 109-14
-
(2006)
Adv. Mater.
, vol.18
, pp. 109-114
-
-
Cai, Y.1
Chan, S.K.2
Sou, I.K.3
Chan, Y.F.4
Su, D.S.5
Wang, N.6
-
110
-
-
65249133619
-
Structures and energetics of indium-catalyzed silicon nanowires
-
Wang Z W and Li Z Y 2009 Structures and energetics of indium-catalyzed silicon nanowires Nano Lett. 9 1467-71
-
(2009)
Nano Lett.
, vol.9
, pp. 1467-1471
-
-
Wang, Z.W.1
Li, Z.Y.2
-
111
-
-
34748873355
-
Influence of plasma stimulation on Si nanowire nucleation and orientation dependence
-
Aella P, Ingole S, Petuskey W T and Picraux S T 2007 Influence of plasma stimulation on Si nanowire nucleation and orientation dependence Adv. Mater. 19 2603-7
-
(2007)
Adv. Mater.
, vol.19
, pp. 2603-2607
-
-
Aella, P.1
Ingole, S.2
Petuskey, W.T.3
Picraux, S.T.4
-
112
-
-
13144266760
-
Orientation-controlled growth of single-crystal silicon-nanowire arrays
-
Ge S, Jiang K, Lu X, Chen Y, Wang R and Fan S 2005 Orientation-controlled growth of single-crystal silicon-nanowire arrays Adv. Mater. 17 56-61
-
(2005)
Adv. Mater.
, vol.17
, pp. 56-61
-
-
Ge, S.1
Jiang, K.2
Lu, X.3
Chen, Y.4
Wang, R.5
Fan, S.6
-
113
-
-
34248374183
-
CdSe nanowires with controllable growth orientations
-
Shan C X, Liu Z and Hark S K 2007 CdSe nanowires with controllable growth orientations Appl. Phys. Lett. 90 193123-3
-
(2007)
Appl. Phys. Lett.
, vol.90
, pp. 193123-193123
-
-
Shan, C.X.1
Liu, Z.2
Hark, S.K.3
-
114
-
-
38849106165
-
Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si(1 1 1) using silane
-
Schmid H, Bjork M T, Knoch J, Riel H, Riess W, Rice P and Topuria T 2008 Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si(1 1 1) using silane J. Appl. Phys. 103 024304-7
-
(2008)
J. Appl. Phys.
, vol.103
, pp. 024304-024307
-
-
Schmid, H.1
Bjork, M.T.2
Knoch, J.3
Riel, H.4
Riess, W.5
Rice, P.6
Topuria, T.7
-
115
-
-
65549107325
-
Orientation specific synthesis of kinked silicon nanowires grown by the vapour-liquid-solid mechanism
-
Hyun Y-J, Lugstein A, Steinmair M, Bertagnolli E and Pongratz P 2009 Orientation specific synthesis of kinked silicon nanowires grown by the vapour-liquid-solid mechanism Nanotechnology 20 125606
-
(2009)
Nanotechnology
, vol.20
, pp. 125606
-
-
Hyun, Y.-J.1
Lugstein, A.2
Steinmair, M.3
Bertagnolli, E.4
Pongratz, P.5
-
116
-
-
31944435288
-
Growth kinetics of heterostructured GaP-GaAs nanowires
-
DOI 10.1021/ja057157h
-
Verheijen M A, Immink G, de Smet T, Borgstrom M T and Bakkers E P A M 2006 Growth kinetics of heterostructured GaP-GaAs nanowires J. Am. Chem. Soc. 128 1353-9 (Pubitemid 43190650)
-
(2006)
Journal of the American Chemical Society
, vol.128
, Issue.4
, pp. 1353-1359
-
-
Verheijen, M.A.1
Immink, G.2
De Smet, T.3
Borgstrom, M.T.4
Bakkers, E.P.A.M.5
-
117
-
-
34548155548
-
III-V nanowire growth mechanism: V/III ratio and temperature effects
-
Dayeh S A, Yu E T and Wang D 2007 III-V nanowire growth mechanism: V/III ratio and temperature effects Nano Lett. 7 2486-90
-
(2007)
Nano Lett.
, vol.7
, pp. 2486-2490
-
-
Dayeh, S.A.1
Yu, E.T.2
Wang, D.3
-
118
-
-
61649111140
-
A systematic study on the growth of GaAs nanowires by metal-organic chemical vapor deposition
-
Soci C, Bao X-Y, Aplin D P R and Wang D 2008 A systematic study on the growth of GaAs nanowires by metal-organic chemical vapor deposition Nano Lett. 8 4275-82
-
(2008)
Nano Lett.
, vol.8
, pp. 4275-4282
-
-
Soci, C.1
Bao, X.-Y.2
Aplin, D.P.R.3
Wang, D.4
-
119
-
-
57349129635
-
High purity GaAs nanowires free of planar defects: Growth and characterization
-
Joyce H J, et al. 2008 High purity GaAs nanowires free of planar defects: growth and characterization Adv. Funct. Mater. 18 3794-800
-
(2008)
Adv. Funct. Mater.
, vol.18
, pp. 3794-3800
-
-
Joyce, H.J.1
-
120
-
-
34748832356
-
2 substrates: Nucleation, evolution, and the role of Au nanoparticles
-
2 substrates: nucleation, evolution, and the role of Au nanoparticles J. Phys. Chem C 111 13331-6
-
(2007)
J. Phys. Chem
, vol.111
, pp. 13331-13336
-
-
Dayeh, S.A.1
Yu, E.T.2
Wang, D.3
-
121
-
-
0001554837
-
Growth mechanism of planar-type GaAs nanowhiskers
-
Haraguchi K, Hiruma K, Hosomi K, Shirai M and Katsuyama T 1997 Growth mechanism of planar-type GaAs nanowhiskers J. Vac. Sci. Technol. B 15 1685-7
-
(1997)
J. Vac. Sci. Technol.
, vol.15
, pp. 1685-1687
-
-
Haraguchi, K.1
Hiruma, K.2
Hosomi, K.3
Shirai, M.4
Katsuyama, T.5
-
122
-
-
24644509302
-
Si nanowire bridges in microtrenches: Integration of growth into device fabrication
-
DOI 10.1002/adma.200401959
-
He R, Gao D, Fan R, Hochbaum A I, Carraro C, Maboudian R and Yang P 2005 Si nanowire bridges in microtrenches: integration of growth into device fabrication Adv. Mater. 17 2098-102 (Pubitemid 41284799)
-
(2005)
Advanced Materials
, vol.17
, Issue.17
, pp. 2098-2102
-
-
He, R.1
Gao, D.2
Fan, R.3
Hochbaum, A.I.4
Carraro, C.5
Maboudian, R.6
Yang, P.7
-
123
-
-
2642566816
-
Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces
-
Islam M S, Sharma S, Kamins T I and Williams R S 2004 Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces Nanotechnology 15 L5-L8-L5-L8
-
(2004)
Nanotechnology
, vol.15
-
-
Islam, M.S.1
Sharma, S.2
Kamins, T.I.3
Williams, R.S.4
-
124
-
-
16244408357
-
A novel interconnection technique for manufacturing nanowire devices
-
Saif Islam M, Sharma S, Kamins T I and Williams R S 2005 A novel interconnection technique for manufacturing nanowire devices Appl. Phys. A 80 1133-40
-
(2005)
Appl. Phys.
, vol.80
, pp. 1133-1140
-
-
Saif Islam, M.1
Sharma, S.2
Kamins, T.I.3
Williams, R.S.4
-
125
-
-
20344378254
-
Structural characteristics and connection mechanism of gold-catalyzed bridging silicon nanowires
-
Sharma S, Kamins T I, Islam M S, Williams R S and Marshall A F 2005 Structural characteristics and connection mechanism of gold-catalyzed bridging silicon nanowires J. Cryst. Growth 280 562-8
-
(2005)
J. Cryst. Growth
, vol.280
, pp. 562-568
-
-
Sharma, S.1
Kamins, T.I.2
Islam, M.S.3
Williams, R.S.4
Marshall, A.F.5
-
126
-
-
34948867885
-
Bridged ZnO nanowires across trenched electrodes
-
Gao P-X, Liu J, Buchine B A, Weintraub B, Wang Z L and Lee J L 2007 Bridged ZnO nanowires across trenched electrodes Appl. Phys. Lett. 91 142108-3
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 142108-142103
-
-
Gao, P.-X.1
Liu, J.2
Buchine, B.A.3
Weintraub, B.4
Wang, Z.L.5
Lee, J.L.6
-
127
-
-
0142016616
-
Self-organized fabrication of planar GaAs nanowhisker arrays
-
Haraguchi K, Hiruma K, Katsuyama T, Tominaga K, Shirai M and Shimada T 1996 Self-organized fabrication of planar GaAs nanowhisker arrays Appl. Phys. Lett. 69 386-7 (Pubitemid 126635991)
-
(1996)
Applied Physics Letters
, vol.69
, Issue.3
, pp. 386-387
-
-
Haraguchi, K.1
Hiruma, K.2
Katsuyama, T.3
Tominaga, K.4
Shirai, M.5
Shimada, T.6
-
128
-
-
36749098460
-
Directed growth of horizontally aligned gallium nitride nanowires for nanoelectromechanical resonator arrays
-
Henry T, Kim K, Ren Z, Yerino C, Han J and Tang H X 2007 Directed growth of horizontally aligned gallium nitride nanowires for nanoelectromechanical resonator arrays Nano Lett. 7 3315-9
-
(2007)
Nano Lett.
, vol.7
, pp. 3315-3319
-
-
Henry, T.1
Kim, K.2
Ren, Z.3
Yerino, C.4
Han, J.5
Tang, H.X.6
-
129
-
-
34250321757
-
Epitaxial growth of aligned GaN nanowires and nanobridges
-
Kim K, Henry T, Cui G, Han J, Song Y-K, Nurmikko A V and Tang H 2007 Epitaxial growth of aligned GaN nanowires and nanobridges Phys. Status Solidi B 244 1810-4
-
(2007)
Phys. Status Solidi
, vol.244
, pp. 1810-1814
-
-
Kim, K.1
Henry, T.2
Cui, G.3
Han, J.4
Song, Y.-K.5
Nurmikko, A.V.6
Tang, H.7
-
130
-
-
33749258714
-
InP nanobridges epitaxially formed between two vertical Si surfaces by metal-catalyzed chemical vapor deposition
-
Yi S S, Girolami G, Amano J, Islam M S, Sharma S, Kamins T I and Kimukin I 2006 InP nanobridges epitaxially formed between two vertical Si surfaces by metal-catalyzed chemical vapor deposition Appl. Phys. Lett. 89 133121-3
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 133121-133123
-
-
Yi, S.S.1
Girolami, G.2
Amano, J.3
Islam, M.S.4
Sharma, S.5
Kamins, T.I.6
Kimukin, I.7
-
131
-
-
27944502060
-
Directed integration of ZnO nanobridge devices on a Si substrate
-
Conley Jr, Stecker L and Ono Y 2005 Directed integration of ZnO nanobridge devices on a Si substrate Appl. Phys. Lett. 87 223114-3
-
(2005)
Appl. Phys. Lett.
, vol.87
, pp. 223114-223113
-
-
Conley1
Stecker, L.2
Ono, Y.3
-
132
-
-
61649116376
-
Integratable nanowire transistors
-
Quitoriano N J and Kamins T I 2008 Integratable nanowire transistors Nano Lett. 8 4410-4
-
(2008)
Nano Lett.
, vol.8
, pp. 4410-4414
-
-
Quitoriano, N.J.1
Kamins, T.I.2
-
133
-
-
65149100033
-
Guiding vapor-liquid-solid nanowire growth using SiO2
-
Quitoriano N J, Wu W and Kamins T I 2009 Guiding vapor-liquid-solid nanowire growth using SiO2 Nanotechnology 20 145303
-
(2009)
Nanotechnology
, vol.20
, pp. 145303
-
-
Quitoriano, N.J.1
Wu, W.2
Kamins, T.I.3
-
134
-
-
24644490525
-
Growth habits and defects in ZnO nanowires grown on GaN/sapphire substrates
-
Levin I, Davydov A, Nikoobakht B, Sanford N and Mogilevsky P 2005 Growth habits and defects in ZnO nanowires grown on GaN/sapphire substrates Appl. Phys. Lett. 87 103110-3
-
(2005)
Appl. Phys. Lett.
, vol.87
, pp. 103110-103113
-
-
Levin, I.1
Davydov, A.2
Nikoobakht, B.3
Sanford, N.4
Mogilevsky, P.5
-
135
-
-
1642569233
-
Large-scale hexagonal-patterned growth of aligned ZnO nanorods for nano-optoelectronics and nanosensor arrays
-
Wang Wang, Summers C J and Wang Z L 2004 Large-scale hexagonal-patterned growth of aligned ZnO nanorods for nano-optoelectronics and nanosensor arrays Nano Lett. 4 423-6
-
(2004)
Nano Lett.
, vol.4
, pp. 423-426
-
-
Wang, W.1
Summers, C.J.2
Wang, Z.L.3
-
136
-
-
19744383421
-
Local luminescence of ZnO nanowire-covered surface: A cathodoluminescence microscopy study
-
Fan H J, Scholz R, Zacharias M, Gosele U, Bertram F, Forster D and Christen J 2005 Local luminescence of ZnO nanowire-covered surface: a cathodoluminescence microscopy study Appl. Phys. Lett. 86 023113-3
-
(2005)
Appl. Phys. Lett.
, vol.86
, pp. 023113-023113
-
-
Fan, H.J.1
Scholz, R.2
Zacharias, M.3
Gosele, U.4
Bertram, F.5
Forster, D.6
Christen, J.7
-
137
-
-
19744366748
-
Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5 N substrates
-
Wang X, Song J, Li P, Ryou J H, Dupuis R D, Summers C J and Wang Z L 2005 Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5 N substrates J. Am. Chem. Soc. 127 7920-3
-
(2005)
J. Am. Chem. Soc.
, vol.127
, pp. 7920-7923
-
-
Wang, X.1
Song, J.2
Li, P.3
Ryou, J.H.4
Dupuis, R.D.5
Summers, C.J.6
Wang, Z.L.7
-
138
-
-
49549114227
-
Manipulation of crawling growth for the formation of sub-millimeter long ZnO nanowalls
-
Fan H J and Zacharias M 2008 Manipulation of crawling growth for the formation of sub-millimeter long ZnO nanowalls J. Mater. Sci. Technol. 24 589-93
-
(2008)
J. Mater. Sci. Technol.
, vol.24
, pp. 589-593
-
-
Fan, H.J.1
Zacharias, M.2
-
139
-
-
1242285062
-
ZnO nanowalls
-
Lao J Y, Huang J Y, Wang D Z, Ren Z F, Steeves D, Kimball B and Porter W 2004 ZnO nanowalls Appl. Phys. A 78 539-42
-
(2004)
Appl. Phys.
, vol.78
, pp. 539-542
-
-
Lao, J.Y.1
Huang, J.Y.2
Wang, D.Z.3
Ren, Z.F.4
Steeves, D.5
Kimball, B.6
Porter, W.7
-
140
-
-
0038475885
-
Growth of epitaxial nanowires at the junctions of nanowalls
-
Ng H T, Li J, Smith M K, Nguyen P, Cassell A, Han J and Meyyappan M 2003 Growth of epitaxial nanowires at the junctions of nanowalls Science 300 1249
-
(2003)
Science
, vol.300
, pp. 1249
-
-
Ng, H.T.1
Li, J.2
Smith, M.K.3
Nguyen, P.4
Cassell, A.5
Han, J.6
Meyyappan, M.7
-
141
-
-
36049020272
-
Toward industrial-scale fabrication of nanowire-based devices
-
Nikoobakht B 2007 Toward industrial-scale fabrication of nanowire-based devices Chem. Mater. 19 5279-84
-
(2007)
Chem. Mater.
, vol.19
, pp. 5279-5284
-
-
Nikoobakht, B.1
-
142
-
-
34547244669
-
The morphology of axial and branched nanowire heterostructures
-
Dick K A, Kodambaka S, Reuter M C, Deppert K, Samuelson L, Seifert W, Wallenberg L R and Ross F M 2007 The morphology of axial and branched nanowire heterostructures Nano Lett. 7 1817-22
-
(2007)
Nano Lett.
, vol.7
, pp. 1817-1822
-
-
Dick, K.A.1
Kodambaka, S.2
Reuter, M.C.3
Deppert, K.4
Samuelson, L.5
Seifert, W.6
Wallenberg, L.R.7
Ross, F.M.8
-
143
-
-
36049027231
-
Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures
-
Paladugu M, Zou J, Guo Y-N, Auchterlonie G J, Joyce H J, Gao Q, Tan H H, Jagadish C and Kim Y 2007 Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures Small 3 1873-7
-
(2007)
Small
, vol.3
, pp. 1873-1877
-
-
Paladugu, M.1
Zou, J.2
Guo, Y.-N.3
Auchterlonie, G.J.4
Joyce, H.J.5
Gao, Q.6
Tan, H.H.7
Jagadish, C.8
Kim, Y.9
-
144
-
-
34848832577
-
Evolution of InAs branches in InAs/GaAs nanowire heterostructures
-
Paladugu M, Zou J, Auchterlonie G J, Guo Y N, Kim Y, Joyce H J, Gao Q, Tan H H and Jagadish C 2007 Evolution of InAs branches in InAs/GaAs nanowire heterostructures Appl. Phys. Lett. 91 133115-3
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 133115-133113
-
-
Paladugu, M.1
Zou, J.2
Auchterlonie, G.J.3
Guo, Y.N.4
Kim, Y.5
Joyce, H.J.6
Gao, Q.7
Tan, H.H.8
Jagadish, C.9
-
145
-
-
2642585470
-
Rational growth of branched and hyperbranched nanowire structures
-
Wang D, Qian F, Yang C, Zhong Z and Lieber C M 2004 Rational growth of branched and hyperbranched nanowire structures Nano Lett. 4 871-4
-
(2004)
Nano Lett.
, vol.4
, pp. 871-874
-
-
Wang, D.1
Qian, F.2
Yang, C.3
Zhong, Z.4
Lieber, C.M.5
-
146
-
-
33846362580
-
Position-controlled interconnected InAs nanowire networks
-
Dick K A, Deppert K, Karlsson L S, Seifert W, Wallenberg L R and Samuelson L 2006 Position-controlled interconnected InAs nanowire networks Nano Lett. 6 2842-7
-
(2006)
Nano Lett.
, vol.6
, pp. 2842-2847
-
-
Dick, K.A.1
Deppert, K.2
Karlsson, L.S.3
Seifert, W.4
Wallenberg, L.R.5
Samuelson, L.6
|