Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 37, Issue 1-2, 2007, Pages 134-137

  Piccin, M ^a,b   Bais, G ^a,b   Grillo, V ^a   Jabeen, F ^a,b   De Franceschi, S ^a   Carlino, E ^a   Lazzarino, M ^a   Romanato, F ^a   Businaro, L ^a   Rubini, S ^a,b   Martelli, F ^a,b   Franciosi, A ^a,b  

^a LABORATORIO TASC   (Italy)

^b UNIVERSITY OF TRIESTE   (Italy)

Author keywords

Electron microscopy; Electronic transport; GaAs; Molecular beam epitaxy; Nanowires

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRIC CHARACTERIZATION; ELECTRICAL TRANSPORT MEASUREMENTS; LATTICE STRUCTURE;

NANOWIRES;

EID: 33947251688     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2006.07.002     Document Type: Article

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