Control of GaP and GaAs nanowire morphology through particle and substrate chemical modification

Nano Letters

Volumn 8, Issue 11, 2008, Pages 4087-4091

  Dick, Kimberly A ^a   Deppert, Knut ^a   Samuelson, Lars ^a   Wallenberg, L Reine ^a   Ross, Frances M ^b  

^a LUND UNIVERSITY   (Sweden)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACKGROUND LEVELS; GAAS; MOVPE; PARTICLE CHEMISTRIES; SHARP TIPS; SI SURFACES; SI(111) SUBSTRATES;

CHEMICAL MODIFICATION; ELECTRIC WIRE; MORPHOLOGY; NANOWIRES; SEMICONDUCTING GALLIUM; SUBSTRATES; SURFACE DIFFUSION; SURFACE TREATMENT;

GALLIUM ALLOYS;

EID: 61649122131     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl8027153     Document Type: Article

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