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Volumn 80, Issue 6, 2002, Pages 1058-1060

One-dimensional heterostructures in semiconductor nanowhiskers

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; DEVICE STRUCTURES; ELECTRICAL MEASUREMENT; HETEROBARRIERS; INAS; INAS/INP; INP; MATERIAL SYSTEMS; SEMICONDUCTOR NANOWHISKERS;

EID: 79955991177     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1447312     Document Type: Article
Times cited : (618)

References (20)
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    • B. J. Ohlsson, M. T. Björk, A. I. Persson, C. Thelander, L. R. Wallenberg, M. H. Magnusson, K. Deppert, L. Samuelson (in press)
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    • Physica e
  • 13
    • 0002992361 scopus 로고
    • edited by A. P. Levitt (Wiley, New York)
    • R. S. Wagner, in Whisker Technology, edited by A. P. Levitt (Wiley, New York, 1970), pp. 47-119.
    • (1970) Whisker Technology , pp. 47-119
    • Wagner, R.S.1
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    • A. M. Morales and C. M. Lieber, Science 279, 208 (1998). sci SCIEAS 0036-8075
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    • 001〉- and 〈111〉-whiskers cannot be distinguished for the electrical measurements. However, no difference in band offsets is expected between the two cases. Furthermore, barriers between ZB and W segments would only give activation energies of the order of tens of meV
    • 〈001〉- and 〈111〉-whiskers cannot be distinguished for the electrical measurements. However, no difference in band offsets is expected between the two cases. Furthermore, barriers between ZB and W segments would only give activation energies of the order of tens of meV.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.