GaAs MESFET with a high-mobility self-assembled planar nanowire channel

IEEE Electron Device Letters

Volumn 30, Issue 6, 2009, Pages 593-595

  Fortuna, Seth A ^a   Li, Xiuling ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

Charge carrier mobility; Field effect transistors (FETs); Nanotechnology; Semiconductor materials

Indexed keywords

BULK-LIKE; ELECTRON CONCENTRATION; EXPERIMENTAL DATA; FIELD-EFFECT DEVICES; FIELD-EFFECT TRANSISTORS (FETS); GAAS; GAAS MESFET; HIGH MOBILITY; ON-CURRENT; SELF-ASSEMBLED; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SUBTHRESHOLD SLOPE; TRANSFER CHARACTERISTICS;

FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; MESFET DEVICES; NANOTECHNOLOGY; NANOWIRES; SEMICONDUCTING GALLIUM;

CARRIER MOBILITY;

EID: 67649344282     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2019769     Document Type: Article

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