Control of thickness and orientation of solution-grown silicon nanowires

Science

Volumn 287, Issue 5457, 2000, Pages 1471-1473

  Holmes, Justin D ^a   Johnston, Keith P ^a   Doty, R Christopher ^a   Korgel, Brian A ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; GOLD; GROWTH (MATERIALS); HEATING; LIGHT ABSORPTION; NANOSTRUCTURED MATERIALS; PRESSURIZATION; QUANTUM THEORY; SILICON; SOLVENTS; ULTRAVIOLET RADIATION;

NANOWIRES;

ELECTRIC WIRE;

NANOPARTICLE; SILICON; SOLVENT; THIOL DERIVATIVE;

ARTICLE; CRYSTALLIZATION; HEATING; LUMINESCENCE; MATERIALS; PRESSURE; PRIORITY JOURNAL; QUANTUM MECHANICS; THICKNESS;

EID: 0034712059     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.287.5457.1471     Document Type: Article

References (26)

1. For a recent review, see S. M. Prokes and K. L. Wang, Mater. Res. Sci. Bull. 24, 13 (1999) and references therein.
2. J. Hu, T. W. Odom, C. M. Lieber, Acc. Chem. Res. 32, 435 (1999).
3. Many calculations of quantum confinement in silicon nanowires exist. See, for example, F. Buda, J. Kohanoff, M. Parrinello, Phys. Rev. Lett. 69, 1272 (1992); A. J. Read et al., Phys. Rev. Lett. 69, 1232 (1992); G. D. Sanders and Y.-C. Chang, Phys. Rev. B 45, 9202 (1992); M.-Y. Shen and S.-L. Zhang, Phys. Lett. A 176, 254 (1993); C.-Y. Yeh, S. B. Zhang, A. Zunger, Phys. Rev. B 50, 14405 (1994); and references therein.
4. Many calculations of quantum confinement in silicon nanowires exist. See, for example, F. Buda, J. Kohanoff, M. Parrinello, Phys. Rev. Lett. 69, 1272 (1992); A. J. Read et al., Phys. Rev. Lett. 69, 1232 (1992); G. D. Sanders and Y.-C. Chang, Phys. Rev. B 45, 9202 (1992); M.-Y. Shen and S.-L. Zhang, Phys. Lett. A 176, 254 (1993); C.-Y. Yeh, S. B. Zhang, A. Zunger, Phys. Rev. B 50, 14405 (1994); and references therein.
5. Many calculations of quantum confinement in silicon nanowires exist. See, for example, F. Buda, J. Kohanoff, M. Parrinello, Phys. Rev. Lett. 69, 1272 (1992); A. J. Read et al., Phys. Rev. Lett. 69, 1232 (1992); G. D. Sanders and Y.-C. Chang, Phys. Rev. B 45, 9202 (1992); M.-Y. Shen and S.-L. Zhang, Phys. Lett. A 176, 254 (1993); C.-Y. Yeh, S. B. Zhang, A. Zunger, Phys. Rev. B 50, 14405 (1994); and references therein.
6. Many calculations of quantum confinement in silicon nanowires exist. See, for example, F. Buda, J. Kohanoff, M. Parrinello, Phys. Rev. Lett. 69, 1272 (1992); A. J. Read et al., Phys. Rev. Lett. 69, 1232 (1992); G. D. Sanders and Y.-C. Chang, Phys. Rev. B 45, 9202 (1992); M.-Y. Shen and S.-L. Zhang, Phys. Lett. A 176, 254 (1993); C.-Y. Yeh, S. B. Zhang, A. Zunger, Phys. Rev. B 50, 14405 (1994); and references therein.
7. Many calculations of quantum confinement in silicon nanowires exist. See, for example, F. Buda, J. Kohanoff, M. Parrinello, Phys. Rev. Lett. 69, 1272 (1992); A. J. Read et al., Phys. Rev. Lett. 69, 1232 (1992); G. D. Sanders and Y.-C. Chang, Phys. Rev. B 45, 9202 (1992); M.-Y. Shen and S.-L. Zhang, Phys. Lett. A 176, 254 (1993); C.-Y. Yeh, S. B. Zhang, A. Zunger, Phys. Rev. B 50, 14405 (1994); and references therein.
8. L. Brus, J. Phys. Chem. 98, 3575 (1994).
9. J. W. Mintmire, B. I. Dunlap, C. T. White, Phys. Rev. Lett. 68, 631 (1992); N. Hamada, S.-I. Sawada, A. Oshiyama, Phys. Rev. Lett. 68, 1579 (1992).
10. J. W. Mintmire, B. I. Dunlap, C. T. White, Phys. Rev. Lett. 68, 631 (1992); N. Hamada, S.-I. Sawada, A. Oshiyama, Phys. Rev. Lett. 68, 1579 (1992).
11. H. Yorikawa, H. Uchida, S. Muramatsu, J. Appl. Phys. 79, 3619 (1996).
12. A. P. Alivisatos, Science 271, 933 (1996).
13. T. J. Trentler et al., Science 270, 1791 (1995); T. J. Trentler et al., J. Am. Chem. Soc. 119, 2172 (1997); J. R. Heath, Chem. Phys. Lett. 208, 263 (1993).
14. T. J. Trentler et al., Science 270, 1791 (1995); T. J. Trentler et al., J. Am. Chem. Soc. 119, 2172 (1997); J. R. Heath, Chem. Phys. Lett. 208, 263 (1993).
15. T. J. Trentler et al., Science 270, 1791 (1995); T. J. Trentler et al., J. Am. Chem. Soc. 119, 2172 (1997); J. R. Heath, Chem. Phys. Lett. 208, 263 (1993).
16. R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964).
17. For example, see J. Westwater, D. P. Gosain, S. Tomiya, S. Usui, H. Ruda, J. Vac. Sci. Technol. B 15, 554 (1997) and references therein.
18. A. M. Morales and C. M. Lieber, Science 279, 208 (1998); Y. F. Zhang et al., Appl. Phys. Lett. 72, 1835 (1998).
19. A. M. Morales and C. M. Lieber, Science 279, 208 (1998); Y. F. Zhang et al., Appl. Phys. Lett. 72, 1835 (1998).
20. 3) equipped with a stainless steel piston. A high-pressure liquid chromatography pump (LDC Analytical) was used to pump deionized water into the back of the piston and displace oxygen-free anhydrous hexane through an inlet heat exchanger and into the reaction cell to the desired pressure of either 200 or 270 bar. The cell was covered with heating tape (0.6 m) and heated to 500°C (±0.2 °C) using a platinum resistance thermometer and a temperature controller. The reaction proceeded at these conditions for 1 hour.
21. The dodecanethiol-capped Au nanocrystals were formed using the procedures outlined in M. Brust, M. Walker, D. Bethell, D. J. Schiffrin, R. Whyman, J. Chem. Soc. Chem. Commun. 1994, 801 (1994); B. A. Korgel and D. Fitzmaurice, Phys. Rev. Lett. 80, 3531 (1998). The nanocrystals had a mean diameter of 25 Å with a SD about the mean of ±20%.
22. The dodecanethiol-capped Au nanocrystals were formed using the procedures outlined in M. Brust, M. Walker, D. Bethell, D. J. Schiffrin, R. Whyman, J. Chem. Soc. Chem. Commun. 1994, 801 (1994); B. A. Korgel and D. Fitzmaurice, Phys. Rev. Lett. 80, 3531 (1998). The nanocrystals had a mean diameter of 25 Å with a SD about the mean of ±20%.
23. M. A. McHugh and V. J. Krukonis, Supercritical Fluids Extraction: Principles and Practice (Butterworth-Heinman, MA, ed. 2, 1993).
24. XPS revealed that the samples consisted of less than 0.1% Au, with ratios of Si:O of 2:1 and Si:C of 1:3. The relatively high concentrations of carbon and oxygen stem from the fact that the volume of the ∼40 Å thick coating of carbon and oxygen surrounding the 40 Å diameter wire has a volume three times that of the silicon core.
25. M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, C. Delerue, Phys. Rev. Lett. 82, 197 (1999).
26. K.P.J. thanks the U.S. Department of Energy and NSF for support. B.A.K. thanks DuPont for support through a Young Professor Grant.