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Volumn 420, Issue 6911, 2002, Pages 57-61

Epitaxial core-shell and core-multishell nanowire heterostructures

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRONIC EQUIPMENT; EPITAXIAL GROWTH; HETEROJUNCTIONS; NANOSTRUCTURED MATERIALS; SILICON; SYNTHESIS (CHEMICAL); TRANSISTORS;

EID: 0037038368     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/nature01141     Document Type: Article
Times cited : (2009)

References (27)
  • 2
    • 0035451899 scopus 로고    scopus 로고
    • The incredible shrinking circuit
    • Lieber, C. M. The incredible shrinking circuit. Sci. Am. 285, 58-64 (2001).
    • (2001) Sci. Am. , vol.285 , pp. 58-64
    • Lieber, C.M.1
  • 3
    • 0035793378 scopus 로고    scopus 로고
    • Functional nanoscale electronic devices assembled using silicon nanowire building blocks
    • Cui, Y. & Lieber, C. M. Functional nanoscale electronic devices assembled using silicon nanowire building blocks. Science 291, 851-853 (2001).
    • (2001) Science , vol.291 , pp. 851-853
    • Cui, Y.1    Lieber, C.M.2
  • 4
    • 0035804248 scopus 로고    scopus 로고
    • Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
    • Duan, X. F., Huang, Y., Cui, Y., Wang, J. F. & Lieber, C. M. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices. Nature 409, 66-69 (2001).
    • (2001) Nature , vol.409 , pp. 66-69
    • Duan, X.F.1    Huang, Y.2    Cui, Y.3    Wang, J.F.4    Lieber, C.M.5
  • 5
    • 0035902938 scopus 로고    scopus 로고
    • Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species
    • Cui, Y., Wei, Q. Q., Park, H. K. & Lieber, C. M. Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species. Science 293, 1289-1292 (2001).
    • (2001) Science , vol.293 , pp. 1289-1292
    • Cui, Y.1    Wei, Q.Q.2    Park, H.K.3    Lieber, C.M.4
  • 6
    • 0035834415 scopus 로고    scopus 로고
    • Logic gates and computation from assembled nanowire building blocks
    • Huang, Y. et al. Logic gates and computation from assembled nanowire building blocks. Science 294, 1313-1317 (2001).
    • (2001) Science , vol.294 , pp. 1313-1317
    • Huang, Y.1
  • 7
    • 0033052782 scopus 로고    scopus 로고
    • Luminescence photophysics in semiconductor nanocrystals
    • Nirmal, M. & Brus, L. Luminescence photophysics in semiconductor nanocrystals. Acc. Chem. Res. 32, 407-414 (1999).
    • (1999) Acc. Chem. Res. , vol.32 , pp. 407-414
    • Nirmal, M.1    Brus, L.2
  • 8
    • 0012392952 scopus 로고    scopus 로고
    • Semiconductor nanocrystals as fluorescent biological labels
    • Bruchez, M., Moronne, M., Gin, P., Weiss, S. & Alivisatos, A. P. Semiconductor nanocrystals as fluorescent biological labels. Science 281, 2013-2016 (1998).
    • (1998) Science , vol.281 , pp. 2013-2016
    • Bruchez, M.1    Moronne, M.2    Gin, P.3    Weiss, S.4    Alivisatos, A.P.5
  • 9
    • 0032566763 scopus 로고    scopus 로고
    • Quantum dot bioconjugates for ultrasensitive nonisotopic detection
    • Chan, W. C. W. & Nie, S. M. Quantum dot bioconjugates for ultrasensitive nonisotopic detection. Science 281, 2016-2018 (1998).
    • (1998) Science , vol.281 , pp. 2016-2018
    • Chan, W.C.W.1    Nie, S.M.2
  • 10
    • 0034644601 scopus 로고    scopus 로고
    • Optical gain and stimulated emission in nanocrystal quantum dots
    • Klimov, V. I. et al. Optical gain and stimulated emission in nanocrystal quantum dots. Science 290, 314-317 (2000).
    • (2000) Science , vol.290 , pp. 314-317
    • Klimov, V.I.1
  • 11
    • 0037033988 scopus 로고    scopus 로고
    • Growth of nanowire superlattice structures for nanoscale photonics and electronics
    • Gudiksen, M. S., Lauhon, L. J., Wang, J., Smith, D. C. & Lieber, C. M. Growth of nanowire superlattice structures for nanoscale photonics and electronics. Nature 415, 617-620 (2002).
    • (2002) Nature , vol.415 , pp. 617-620
    • Gudiksen, M.S.1    Lauhon, L.J.2    Wang, J.3    Smith, D.C.4    Lieber, C.M.5
  • 12
    • 79955991177 scopus 로고    scopus 로고
    • One-dimensional heterostructures in semiconductor nanowhiskers
    • Bjork, M. T. et al. One-dimensional heterostructures in semiconductor nanowhiskers. Appl. Phys. Lett. 80, 1058-1060 (2002).
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 1058-1060
    • Bjork, M.T.1
  • 13
    • 0002614758 scopus 로고    scopus 로고
    • Block-by-block growth of single-crystalline Si/SiGe superlattice nanowires
    • Wu, Y. Y., Fan, R. & Yang, P. D. Block-by-block growth of single-crystalline Si/SiGe superlattice nanowires. Nano Lett. 2, 83-86 (2002).
    • (2002) Nano Lett. , vol.2 , pp. 83-86
    • Wu, Y.Y.1    Fan, R.2    Yang, P.D.3
  • 15
    • 0033887818 scopus 로고    scopus 로고
    • General synthesis of compound semiconductor nanowires
    • Duan, X. F. & Lieber, C. M. General synthesis of compound semiconductor nanowires. Adv. Mater. 12, 298-302 (2000).
    • (2000) Adv. Mater. , vol.12 , pp. 298-302
    • Duan, X.F.1    Lieber, C.M.2
  • 16
    • 0034644416 scopus 로고    scopus 로고
    • Diameter-selective synthesis of semiconductor nanowires
    • Gudiksen, M. S. & Lieber, C. M. Diameter-selective synthesis of semiconductor nanowires. J. Am. Chem. Soc. 122, 8801-8802 (2000).
    • (2000) J. Am. Chem. Soc. , vol.122 , pp. 8801-8802
    • Gudiksen, M.S.1    Lieber, C.M.2
  • 17
    • 0033693569 scopus 로고    scopus 로고
    • SiGe technology: Heteroepitaxy and high-speed microelectronics
    • Mooney, P. M. & Chu, J. O. SiGe technology: Heteroepitaxy and high-speed microelectronics. Annu. Rev. Mater. Sci. 30, 335-362 (2000).
    • (2000) Annu. Rev. Mater. Sci. , vol.30 , pp. 335-362
    • Mooney, P.M.1    Chu, J.O.2
  • 18
    • 0035831837 scopus 로고    scopus 로고
    • Diameter-controlled synthesis of single-crystal silicon nanowires
    • Cui, Y., Lauhon, L. J., Gudiksen, M. S., Wang, J. F. & Lieber, C. M. Diameter-controlled synthesis of single-crystal silicon nanowires. Appl. Phys. Lett. 78, 2214-2216 (2001).
    • (2001) Appl. Phys. Lett. , vol.78 , pp. 2214-2216
    • Cui, Y.1    Lauhon, L.J.2    Gudiksen, M.S.3    Wang, J.F.4    Lieber, C.M.5
  • 19
    • 0033075127 scopus 로고    scopus 로고
    • In situ doping of silicon deposited by LPCVD: Pressure influence on dopant incorporation mechanisms
    • Briand, D., Sarret, M., Kis-Sion, K., Mohammed-Brahim, T. & Duverneuil, P. In situ doping of silicon deposited by LPCVD: Pressure influence on dopant incorporation mechanisms. Semicond. Sci. Technol. 14, 173-180 (1999).
    • (1999) Semicond. Sci. Technol. , vol.14 , pp. 173-180
    • Briand, D.1    Sarret, M.2    Kis-Sion, K.3    Mohammed-Brahim, T.4    Duverneuil, P.5
  • 20
    • 79956054766 scopus 로고    scopus 로고
    • Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150 degrees C
    • Cheng, I. C. & Wagner, S. Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150 degrees C. Appl. Phys. Lett. 80, 440-442 (2002).
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 440-442
    • Cheng, I.C.1    Wagner, S.2
  • 21
    • 0026899612 scopus 로고
    • A unified mobility model for device simulation. 1. Model-equations and concentration-dependence
    • Klaassen, D. B. M. A unified mobility model for device simulation. 1. Model-equations and concentration-dependence. Solid-State Electron. 35, 953-959 (1992).
    • (1992) Solid-State Electron. , vol.35 , pp. 953-959
    • Klaassen, D.B.M.1
  • 23
    • 36449001974 scopus 로고
    • Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere
    • Grutzmacher, D. A. et al. Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere. Appl. Phys. Lett. 63, 2531-2533 (1993).
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 2531-2533
    • Grutzmacher, D.A.1
  • 24
    • 79956022434 scopus 로고    scopus 로고
    • Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes
    • Wind, S. J., Appenzeller, J., Martel, R., Derycke, V. & Avouris, P. Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes. Appl. Phys. Lett. 80, 3817-3819 (2002).
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 3817-3819
    • Wind, S.J.1    Appenzeller, J.2    Martel, R.3    Derycke, V.4    Avouris, P.5
  • 25
    • 0033693266 scopus 로고    scopus 로고
    • Device innovation and material challenges at the limits of CMOS technology
    • Solomon, P. M. Device innovation and material challenges at the limits of CMOS technology. Annu. Rev. Mater. Sci. 30, 681-697 (2000).
    • (2000) Annu. Rev. Mater. Sci. , vol.30 , pp. 681-697
    • Solomon, P.M.1
  • 26
    • 0005836651 scopus 로고    scopus 로고
    • Single- and multi-wall carbon nanotube field-effect transistors
    • Martel, R., Schmidt, T., Shea, H. R., Hertel, T. & Avouris, P. Single- and multi-wall carbon nanotube field-effect transistors. Appl. Phys. Lett. 73, 2447-2449 (1998).
    • (1998) Appl. Phys. Lett. , vol.73 , pp. 2447-2449
    • Martel, R.1    Schmidt, T.2    Shea, H.R.3    Hertel, T.4    Avouris, P.5
  • 27
    • 0000340525 scopus 로고
    • Plan-view transmission electron diffraction measurement of roughness at buried Si/SiO2 interfaces
    • Gibson, J. M., Lanzerotti, M. Y. & Elser, V. Plan-view transmission electron diffraction measurement of roughness at buried Si/SiO2 interfaces. Appl. Phys. Lett. 55, 1394-1396 (1989).
    • (1989) Appl. Phys. Lett. , vol.55 , pp. 1394-1396
    • Gibson, J.M.1    Lanzerotti, M.Y.2    Elser, V.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.