SCOPUS 정보 검색 플랫폼

Advanced Materials

Volumn 15, Issue 7-8, 2003, Pages 607-609

Growth direction and cross-sectional study of silicon nanowires

(6) Li, Chi Pui a Lee, Chun Sing a Ma, Xiu Liang a Wang, Ning b Zhang, Rui Qin a Lee, Shuit Tong a

a CITY UNIVERSITY OF HONG KONG (Hong Kong)

b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL GROWTH; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; ELECTRON DIFFRACTION; EVAPORATION; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CROSS SECTIONAL STUDY; OXIDE ASSISTED GROWTH; SELECTED AREA ELECTRON DIFFRACTION; SILICON NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 0038187633 PISSN: 09359648 EISSN: None Source Type: Journal
DOI: 10.1002/adma.200304409 Document Type: Article

Times cited : (102)

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