Interface study on heterostructured GaP-GaAs nanowires

Nanotechnology

Volumn 17, Issue 16, 2006, Pages 4010-4013

  Borgström, Magnus T ^a   Verheijen, Marcel A ^a   Immink, George ^a   De Smet, Thierry ^b   Bakkers, Erik P A M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b Cedova   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; COMPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; GROWTH (MATERIALS); HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS);

GROWTH RATE; INTERFACE SHARPNESS; MOLAR FRACTION; NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 33748898542     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/16/002     Document Type: Article

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