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Nano Letters
Volumn 9, Issue 5, 2009, Pages 2183-2187
Coaxial group iii-nitride nanowire photovoltaics
Author keywords

[No Author keywords available]
Indexed keywords

ACTIVE LAYER; BAND GAP VARIATION; BAND GAPS; CORE/SHELL; CURRENT-VOLTAGE DATA; ENHANCED EFFICIENCY; GAN NANOWIRES; GROUP III; IDEALITY FACTORS; III-NITRIDE; MAXIMUM EFFICIENCY; MOLE FRACTION; NANOSCALE BUILDING BLOCKS; NEW CONCEPT; PHOTOVOLTAICS; SHORT-WAVELENGTH; SINGLE NANOWIRES; SOLAR LIGHT; TUNABLE EMISSIONS;
EID: 66449111861     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl900858v     Document Type: Article
Times cited : (394)
References (37)
  • 1
    • 66449108900 scopus 로고    scopus 로고
    • Basic Research Needs for Solar Energy Utilization, Report of the Basic Energy Sciences Workshop on Solar Energy Utilization. April 18- 21, 2005; US Department of Energy, Washington, DC, 2005 (http:// www.er.doe.gov/bes/ reports/abstracts.html#SEU).
    • Basic Research Needs for Solar Energy Utilization, Report of the Basic Energy Sciences Workshop on Solar Energy Utilization. April 18- 21, 2005; US Department of Energy, Washington, DC, 2005 (http:// www.er.doe.gov/bes/ reports/abstracts.html#SEU).
  • 2
  • 32
    • 84868953141 scopus 로고    scopus 로고
    • Coaxial n-GaN/i-InxGa1-xN/p-GaN core/shell/shell nanowires were synthesized as follows: 0.01 M nickel nitrate solution was deposited on a sapphire substrate and placed in a MOCVD reactor (Thomas Swan Scientific Equipment Ltd, n-type GaN cores were grown in hydrogen (H 2)at 950 °C and 700 Torr for 4800 s using trimethyl- gallium (TMG, 22 μmol min1) and ammonia (NH3, 67 mmol min 1, while silane (100 ppm in H2, 2 sccm) was used as the n-type dopant. The intrinsic InGaN layer was sequentially deposited in nitrogen at 715-775 °C and 300 Torr for 500 s, using TMG (5.3 μmol min 1) and trimethylindium (TMI, 6.5 μmol min-1) as Ga and In sources, respectively. Lastly, the p-GaN outer shell was grown in H2 at 960 °C and 100 Torr for 400 s using bis(cyclopentadienyl)magnesium (MgCp2, 0.65 μmol min-1) as p-type dopant. Our III-nitride nanowires have triangular cro
    • 2227 The triangular side length of the p-i-n nanowires was ca. 1-1.25μm and the thicknesses of the i-InGaN and p-GaN layers were ca. 80- 100 and 100- 125 nm, respectively. The lengths of the nanowires after transfer to the substrate for device fabrication were 15 to 40 μm. The coaxial n-GaN/p-GaN core/shell nanowire synthesis was the same as above except that the InGaN layer deposition step was eliminated.
  • 33
    • 84868948154 scopus 로고    scopus 로고
    • The nanowires were dispersed on silicon substrates (100 nm oxide/ 200 nm nitride, 1, 10 ω-cm resistivity) for electrical and optoelectronic measurements. Electron beam lithography (EBL) was used to define windows at nanowire ends, and then the shells were etched using a Unaxis Shuttleline ICP RIE at constant process parameters of 10 sccm BCl3, 10 sccm Ar, and 3 sccm N2 flow, 550 W ICP power, 200 W RIE power, 2 mTorr pressure, and 23 °C temperature for 2 min. The etching rate was determined to be ∼2nm-s-1. Electrical contacts were defined in two separate EBL steps, where Ni/Au (150/150 nm) and Ti/Al/Ti/Au (20/100/30/250 nm) were deposited for p-type shell and n-type core contacts, respectively. The contacts were annealed in nitrogen at 550 °C for 2 min. I- V data were recorded using an Agilent semiconductor parameter analyzer (model 4156C) and EL spectra were recorded using a 300 mm spectrometer 150 lines-mm-1 gratin
    • 4 laser (model J40-BL6-266Q) with 35 kHz repetition rate, and 7 ns pulse duration. Illumination intensities were calibrated with a power meter (Coherent, Field Master).

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