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Volumn 4, Issue 10, 2004, Pages 1975-1979

Gallium nitride-based nanowire radial heterostructures for nanophotonics

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC EQUIPMENT; ELECTRON MICROSCOPY; GALLIUM NITRIDE; LASERS; LIGHT EMITTING DIODES; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PHOTONS; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL);

EID: 7644229875     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0487774     Document Type: Article
Times cited : (607)

References (24)
  • 12
    • 0032516703 scopus 로고    scopus 로고
    • Nakamura, S. Science 1998, 281, 956-961.
    • (1998) Science , vol.281 , pp. 956-961
    • Nakamura, S.1
  • 15
    • 7644234558 scopus 로고    scopus 로고
    • note
    • 3 flow (6500 sccm) at 400 Torr. Intrinsic InGaN shells were deposited at 700°C using TMG (0.55 sccm) and TMI (140 sccm). p-Type GaN shells were grown at 960°C using TMG (5 sccm) and biscyclopentadienylmagnesium (990 sccm) as the Mg dopant source.
  • 19
    • 7644235728 scopus 로고    scopus 로고
    • note
    • For TEM studies, nanowires were transferred to copper/holey carbon grids and characterized using a field emission system (JEOL 2010F) operated at 200 kV. EDX elemental line profiles were collected in the scanning TEM mode. EDX profiles were analyzed as follows neglecting absorption effects. Geometrical models of CS and CSS structures were made having triangular cross sections defined by three 60° angles, as an approximation to the experimentally determined cross section of GaN nanowires defined by one (0001) and two {1-101} crystallographic planes, which define a triangle with two 62° and one 56° angles. These models were then used to fit experimental line profiles taking into account a Gaussian electron probe profile of 2.5 nm fwhm, where the core and shell thicknesses, as well as the nanowire tilt angle relative to the electron beam, were parameters.
  • 20
    • 7644241501 scopus 로고    scopus 로고
    • note
    • 2 onto the nanowires dispersed onto the oxidized surface of a silicon substrate. PL and EL data were recorded using a 300 mm spectrometer (150 lines/min grating) and a liquid nitrogen cooled charge-coupled device detector; images were obtained with the same system by replacing the grating with a mirror.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.