Structural characteristics and connection mechanism of gold-catalyzed bridging silicon nanowires

Journal of Crystal Growth

Volumn 280, Issue 3-4, 2005, Pages 562-568

  Sharma, S ^a   Kamins, T I ^a   Islam, M S ^a   Williams, R Stanley ^a   Marshall, A F ^b  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

A1. Bridging; A1. Nanowires; A3. Chemical vapor deposition; B3. Sensors

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; EUTECTICS; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY; SENSORS; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; WIRE;

BRIDGING; FOCUSED ION BEAMS (FIB); IMPINGEMENT REGIONS; SILICON NANOWIRES;

SEMICONDUCTING SILICON;

EID: 20344378254     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.04.039     Document Type: Article

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