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Volumn 19, Issue 22, 2007, Pages 5279-5284

Toward industrial-scale fabrication of nanowire-based devices

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC CRYSTALS; ASSEMBLY TECHNOLOGY; NANODEVICES;

EID: 36049020272     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm071798p     Document Type: Article
Times cited : (57)

References (22)
  • 1
    • 33846330666 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors ITRS
    • International Technology Roadmap for Semiconductors (ITRS), Emerging Research Devices. http://www.itrs.net/Links/2005ITRS/ERD2005.
    • Emerging Research Devices
  • 19
    • 84858466826 scopus 로고    scopus 로고
    • 0L/ln(4hld), where C is the capacitance of the gate, L is the device length, h is the oxide thickness, and d is the NW diameter.
    • 0L/ln(4hld), where C is the capacitance of the gate, L is the device length, h is the oxide thickness, and d is the NW diameter.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.