-
1
-
-
33846330666
-
-
International Technology Roadmap for Semiconductors ITRS
-
International Technology Roadmap for Semiconductors (ITRS), Emerging Research Devices. http://www.itrs.net/Links/2005ITRS/ERD2005.
-
Emerging Research Devices
-
-
-
2
-
-
0000064757
-
-
Smith, P. A.; Nordquist, C. D.; Jackson, T. N.; Mayer, T. S.; Martin, B. R.; Mbindyo, J.; Mallouk, T. E. Appl. Phys. Lett. 2000, 77, 1399.
-
(2000)
Appl. Phys. Lett
, vol.77
, pp. 1399
-
-
Smith, P.A.1
Nordquist, C.D.2
Jackson, T.N.3
Mayer, T.S.4
Martin, B.R.5
Mbindyo, J.6
Mallouk, T.E.7
-
3
-
-
0034824859
-
-
Huang, Y.; Duan, X.; Wei, Q.; Lieber, C. M. Science 2001, 291, 630.
-
(2001)
Science
, vol.291
, pp. 630
-
-
Huang, Y.1
Duan, X.2
Wei, Q.3
Lieber, C.M.4
-
4
-
-
0034799868
-
-
Kim, F.; Kwan, S.; Akana, J.; Yang, P. D. J. Am. Chem. Soc. 2001, 123, 4360.
-
(2001)
J. Am. Chem. Soc
, vol.123
, pp. 4360
-
-
Kim, F.1
Kwan, S.2
Akana, J.3
Yang, P.D.4
-
5
-
-
0037418895
-
-
Melosh, N.; Boukai, A.; Diana, F.; Gerardot, B.; Badolato, A.; Petroff, P. M.; Heath, J. R. Science 2003, 300, 112.
-
(2003)
Science
, vol.300
, pp. 112
-
-
Melosh, N.1
Boukai, A.2
Diana, F.3
Gerardot, B.4
Badolato, A.5
Petroff, P.M.6
Heath, J.R.7
-
6
-
-
34249938954
-
-
Yu, G.; Cao, A.; Lieber, C. M. Nat. Nanotechnol. 2007, 2, 372.
-
(2007)
Nat. Nanotechnol
, vol.2
, pp. 372
-
-
Yu, G.1
Cao, A.2
Lieber, C.M.3
-
7
-
-
0000183564
-
-
Pan, Z. W.; Dai, Z. R.; Wang, Z. L. Science 2002, 291, 1947.
-
(2002)
Science
, vol.291
, pp. 1947
-
-
Pan, Z.W.1
Dai, Z.R.2
Wang, Z.L.3
-
8
-
-
34147113273
-
-
Wang, X.; Song, J.; Liu, J.; Wang, Z. L. Science 2007, 316, 102.
-
(2007)
Science
, vol.316
, pp. 102
-
-
Wang, X.1
Song, J.2
Liu, J.3
Wang, Z.L.4
-
9
-
-
0038362743
-
-
Nomura, K.; Ohta, H.; Ueda, K.; Kamiya, T.; Hirano, M.; Hosono, H. Science 2003, 300, 1269.
-
(2003)
Science
, vol.300
, pp. 1269
-
-
Nomura, K.1
Ohta, H.2
Ueda, K.3
Kamiya, T.4
Hirano, M.5
Hosono, H.6
-
10
-
-
8644252729
-
-
Nikoobakht, B.; Michaels, C. A.; Vaudin, M. D.; Stranick, S. J. Appl. Phys. Lett. 2004, 85, 3244.
-
(2004)
Appl. Phys. Lett
, vol.85
, pp. 3244
-
-
Nikoobakht, B.1
Michaels, C.A.2
Vaudin, M.D.3
Stranick, S.J.4
-
11
-
-
0000809027
-
-
Fons, P.; Iwata, K.; Yamada, A.; Matsubara, K.; Niki, S.; Nakahara, K.; Tanabe, T.; Takasu, H. Appl Phys. Lett. 2000, 77, 1801.
-
(2000)
Appl Phys. Lett
, vol.77
, pp. 1801
-
-
Fons, P.1
Iwata, K.2
Yamada, A.3
Matsubara, K.4
Niki, S.5
Nakahara, K.6
Tanabe, T.7
Takasu, H.8
-
12
-
-
0001157744
-
-
Chen, Y.; Ohlberg, D. A. A.; Medeiros-Ribeiro, G.; Chang, Y. A.; Williams, R. S. Appl. Phys. Lett. 2000, 76, 4004.
-
(2000)
Appl. Phys. Lett
, vol.76
, pp. 4004
-
-
Chen, Y.1
Ohlberg, D.A.A.2
Medeiros-Ribeiro, G.3
Chang, Y.A.4
Williams, R.S.5
-
13
-
-
0037382736
-
-
Ragan, R.; Chen, Y.; Ohlberg, D. A. A.; Medeiros-Ribeiro, G.; Williams, R. S. J. Cryst. Growth 2003, 251, 657.
-
(2003)
J. Cryst. Growth
, vol.251
, pp. 657
-
-
Ragan, R.1
Chen, Y.2
Ohlberg, D.A.A.3
Medeiros-Ribeiro, G.4
Williams, R.S.5
-
15
-
-
0000986791
-
-
Yazawa, M.; Koguchi, M.; Hirutna, K. Appl. Phys. Lett. 1991, 58, 1080.
-
(1991)
Appl. Phys. Lett
, vol.58
, pp. 1080
-
-
Yazawa, M.1
Koguchi, M.2
Hirutna, K.3
-
16
-
-
0035827304
-
-
Huang, M. H.; Mao, S.; Feick, H.; Yan, H.; Wu, Y.; Kind, H.; Weber, E.; Russo, R.; Yang, P. Science 2001, 292, 1897.
-
(2001)
Science
, vol.292
, pp. 1897
-
-
Huang, M.H.1
Mao, S.2
Feick, H.3
Yan, H.4
Wu, Y.5
Kind, H.6
Weber, E.7
Russo, R.8
Yang, P.9
-
17
-
-
2642552870
-
-
Jin, S.; Whang, D. M.; McAlpine, M. C.; Friedman, R. S.; Wu, Y.; Lieber, C. M. Nano Lett. 2004, 4, 915.
-
(2004)
Nano Lett
, vol.4
, pp. 915
-
-
Jin, S.1
Whang, D.M.2
McAlpine, M.C.3
Friedman, R.S.4
Wu, Y.5
Lieber, C.M.6
-
19
-
-
84858466826
-
-
0L/ln(4hld), where C is the capacitance of the gate, L is the device length, h is the oxide thickness, and d is the NW diameter.
-
0L/ln(4hld), where C is the capacitance of the gate, L is the device length, h is the oxide thickness, and d is the NW diameter.
-
-
-
-
20
-
-
0005836651
-
-
Martel, R.; Schmidt, T.; Shea, H. R.; Hertel, T.; Avouris, Ph. Appl. Phys. Lett. 1998, 73, 2447.
-
(1998)
Appl. Phys. Lett
, vol.73
, pp. 2447
-
-
Martel, R.1
Schmidt, T.2
Shea, H.R.3
Hertel, T.4
Avouris, P.5
-
21
-
-
7544247006
-
-
Fortunato, E. M. C.; Barquinha, P. M. C.; Pimentel, A. C. M. B. G.; Gonçalves, A. M. F.; Marques, A. J. S.; Martins, R. F. P.; Pereira, L. M. N. Appl. Phys. Lett. 2004, 85, 2541.
-
(2004)
Appl. Phys. Lett
, vol.85
, pp. 2541
-
-
Fortunato, E.M.C.1
Barquinha, P.M.C.2
Pimentel, A.C.M.B.G.3
Gonçalves, A.M.F.4
Marques, A.J.S.5
Martins, R.F.P.6
Pereira, L.M.N.7
-
22
-
-
0036974829
-
-
Javey, A.; Kim, H.; Brink, M.; Wang, Q.; Ural, A.; Guo, J.; Mcintyre, P.; Mceuen, P.; Lundstrom, M.; Hongjie, D. Nat. Mater. 2002, 1, 241.
-
(2002)
Nat. Mater
, vol.1
, pp. 241
-
-
Javey, A.1
Kim, H.2
Brink, M.3
Wang, Q.4
Ural, A.5
Guo, J.6
Mcintyre, P.7
Mceuen, P.8
Lundstrom, M.9
Hongjie, D.10
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