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Volumn 163, Issue 3, 1996, Pages 226-231
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Self-organized growth of GaAs/InAs heterostructure nanocylinders by organometallic vapor phase epitaxy
a a a a
a
HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL ATOMIC STRUCTURE;
CRYSTAL STRUCTURE;
HETEROJUNCTIONS;
METALLORGANIC VAPOR PHASE EPITAXY;
NANOSTRUCTURED MATERIALS;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
TRANSMISSION ELECTRON MICROSCOPY;
WIRE;
X RAY ANALYSIS;
ATOMIC COMPOSITION;
ENERGY DISPERSIVE X RAY ANALYSIS;
HETEROSTRUCTURE NANOCYLINDERS;
VAPOR LIQUID SOLID GROWTH;
WURTZITE;
ZINCBLENDE;
SEMICONDUCTOR GROWTH;
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EID: 0030165610
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(95)00714-8 Document Type: Article |
Times cited : (68)
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References (14)
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