Modal characteristics in a single-nanowire cavity with a triangular cross section

Nano Letters

Volumn 8, Issue 12, 2008, Pages 4534-4538

  Seo, Min Kyo ^a   Yang, Jin Kyu ^a   Jeong, Kwang Yong ^a   Park, Hong Gyu ^b   Qian, Fang ^c   Ee, Ho Seok ^b   No, You Shin ^b   Lee, Yong Hee ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea University   (South Korea)

^c HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONFINEMENT FACTORS; DESIGN AND DEVELOPMENT; FAR FIELDS; FINITE-DIFFERENCE TIME-DOMAIN SIMULATIONS; GAN NANOWIRES; MODAL CHARACTERISTICS; NANOPHOTONIC INTEGRATED CIRCUITS; NANOWIRE CAVITIES; QUALITY FACTORS; RESONANT MODES; SILICON DIOXIDE SUBSTRATES; SINGLE-MODE CONDITIONS; TRANSVERSE ELECTRICS; TRANSVERSE MAGNETIC; TRIANGULAR CROSS-SECTIONS;

FIELD EMISSION; GALLIUM ALLOYS; GALLIUM NITRIDE; INTEGRATED CIRCUITS; LIGHT; LIGHT SOURCES; METHOD OF MOMENTS; NANOWIRES; SEMICONDUCTING GALLIUM; SILICA; SYSTEMS ENGINEERING; THREE DIMENSIONAL; TIME DOMAIN ANALYSIS;

ELECTRIC WIRE;

EID: 61649113958     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl8027125     Document Type: Article

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