III-V nanowire growth mechanism: V/III ratio and temperature effects

Nano Letters

Volumn 7, Issue 8, 2007, Pages 2486-2490

  Dayeh, Shadi A ^a   Yu, Edward T ^a   Wang, Deli ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM ARSENIDE; NUCLEATION; ORGANOMETALLICS; SEMICONDUCTOR GROWTH; VAPOR PHASE EPITAXY;

GROWTH MORPHOLOGY; SUBSTRATE TEMPERATURE; VAPOR-LIQUID-SOLID GROWTH MECHANISM;

NANOWIRES;

GOLD; INDIUM; INDIUM ARSENIDE; NANOTUBE; ORGANOARSENIC DERIVATIVE; UNCLASSIFIED DRUG;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; TEMPERATURE; ULTRASTRUCTURE;

ARSENICALS; CRYSTALLIZATION; GOLD; INDIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SURFACE PROPERTIES; TEMPERATURE;

EID: 34548155548     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0712668     Document Type: Article

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