Evolution of epitaxial InAs nanowires on GaAs (111)B

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Volumn 5, Issue 3, 2009, Pages 366-369

  Zhang, Xin ^a,d   Zou, Jin ^a   Paladugu, Mohanchand ^a   Guo, Yanan ^a   Wang, Yong ^a   Kim, Yong ^b   Joyce, Hannah J ^c   Gao, Qiang ^c   Tan, H Hoe ^c   Jagadish, Chennupati ^c  

^a UNIVERSITY OF QUEENSLAND   (Australia)

^b Dong A University   (South Korea)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^d FUDAN UNIVERSITY   (China)

Author keywords

Epitaxy; GaAs; InAs; Interfacial energy; Nanowires

Indexed keywords

CATALYSIS; CATALYSTS; CRYSTAL GROWTH; ELECTRIC WIRE; EPITAXIAL GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM ARSENIDE; INTERFACIAL ENERGY; NANOWIRES; PHASE INTERFACES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SUBSTRATES;

AU CATALYSTS; EPITAXIALLY GROWN; EPITAXY; GAAS; GAAS SUBSTRATES; GROWTH TIME; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPIES; HRTEM IMAGES; INAS; INAS/GAAS; MISFIT DISLOCATIONS; SCANNING ELECTRON MICROSCOPY IMAGES; SYSTEMATIC INVESTIGATIONS;

GALLIUM ALLOYS;

GALLIUM; GALLIUM ARSENIDE; INDIUM; INDIUM ARSENIDE; NANOWIRE; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMISTRY; SCANNING ELECTRON MICROSCOPY; ULTRASTRUCTURE;

ARSENICALS; GALLIUM; INDIUM; MICROSCOPY, ELECTRON, SCANNING; NANOWIRES;

EID: 60849087344     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200800690     Document Type: Article

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