Position-controlled epitaxial III-V nanowires on silicon

Nanotechnology

Volumn 17, Issue 11, 2006, Pages

  Roest, Aarnoud L ^a   Verheijen, Marcel A ^a   Wunnicke, Olaf ^a   Serafin, Stacey ^a   Wondergem, Harry ^a   Bakkers, Erik P A M ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; LASER ABLATION; SEMICONDUCTOR DEVICES; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EPITAXIAL INTEGRATION; NANOWIRES; VAPOUR PHASE EPITAXY; VLS MECHANISM;

NANOSTRUCTURED MATERIALS;

EID: 33744522164     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/11/S07     Document Type: Article

References (13)

1. Choi H-S P 2002 IBM Res. Dev. 46 133
2. Chau R, Datta S, Doczy M, Doyle B, Jin B, Kavalieros J, Majumdar A, Metz M and Radosavljevic M 2005 IEEE Trans. Nanotechnol. 4 153
3. Berg A A and Dean P J 1976 Light-Emitting Diodes (Oxford: Clarendon)
4. Huo J, Solanki R, Freeouf J L and Carruthers J R 2004 Nanotechnology 15 1848
5. Fang S F, Adomi K, Lyer S, Morkoc Z, Choi H and Otsuka C 1990 J. Appl. Phys. 68 R31
6. Cohen D and Carter C B 2002 J. Microsc. 208 84
7. Mrtensson T, Svensson C P T, Wacaser B A, Larsson M W, Seifert W, Deppert K, Gustafsson A, Wallenberg L R and Samuelson L 2004 Nano Lett. 4 1987
8. Bakkers E P A M, Van Dam J A, De Franceschi S, Kouwenhoven L P, Kaiser M, Verheijen M, Wondergem H and Van der Sluis P 2004 Nat. Mater. 3 769
9. Wagner R S and Ellis W C 1964 Appl. Phys. Lett. 4 89
10. Hiraki A, Lugujjo E and Mayer J W 1972 J. Appl. Phys. 43 3643
11. Bakkers E P A M and Verheijen M 2003 J. Am. Chem. Soc. 125 3440
12. Krishnamachari U, Borgstrom M, Ohlsson B J, Panev N, Samuelson L and Seifert W 2004 Appl. Phys. Lett. 85 2078
13. Mahowald P H, List R S, Woicik J, Pianetta P and Spicer WE 1986 Phys. Rev. B 34 7069