Influence of indium and phosphine on Au-catalyzed InP nanowire growth on Si substrates

Journal of Crystal Growth

Volumn 311, Issue 5, 2009, Pages 1446-1450

  Boles, Steven T ^a   Thompson, Carl V ^a   Fitzgerald, Eugene A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

A1. Nanostructures; A3. Metalorganic chemical vapor deposition; B1. Phosphides; B2. Semiconducting III V materials

Indexed keywords

CATALYSIS; CATALYSTS; ELECTRIC WIRE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; PHOSPHORUS COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON; SILICON ALLOYS; SILVER; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; WIRE PRODUCTS;

A1. NANOSTRUCTURES; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; AG CATALYSTS; B1. PHOSPHIDES; B2. SEMICONDUCTING III-V MATERIALS; CATALYST PARTICLES; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPIES; ENERGY DISPERSIVE X-RAY SPECTROSCOPIES; INP; NANOWIRE GROWTHS; SI SUBSTRATES; TRIMETHYLINDIUM; VLS MECHANISMS; WIRE GROWTHS; X- RAY DIFFRACTIONS;

SUBSTRATES;

EID: 61449266459     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.12.043     Document Type: Article

References (20)

1. Hu Y., Xiang J., Liang G., Yan H., and Lieber C.M. Nano Lett. 8 (2008) 925
2. Qian F., Gradecak S., Li Y., Wen C., and Lieber C.M. Nano Lett. 5 (2005) 2287
3. Jagannathan H., Deal M., Nishi Y., Woodruff J., Chidsey C., and McIntyre P.C. J. Appl. Phys. 100 (2006) 024318
4. Martensson T., Svensson C.P.T., Wacaser B.A., Larsson M.W., Seifert W., Deppert K., Gustafsson A., Wallenberg L.R., and Samuelson L. Nano Lett. 4 (2004) 1987
5. Erik P.A.M. Bakkers, Magnus T. Borgström, Marcel A. Verheijen, Epitaxial Growth of III-V Nanowires on Group IV Substrates, MRS Bulletin, 2007.
6. Tomioka K., Motohisa J., Hara S., and Fukui T. Nano Lett. 8 (2008) 3475
7. Jagannathana H., Nishi Y., Reuter M., Copel M., Tutuc E., Guhab S., and Pezzia R.P. Appl. Phys. Lett. 88 (2006) 103113
8. Hiaki A., Lugujjo E., and Mayer J.W. J. Appl. Phys. 43 (1972) 3643
9. Hiruma K., Yazawa M., Katsuyama T., Ogawa K., Haraguchi K., Koguchi M., and Kakibayashi H. J. Appl. Phys. 77 (1995) 447
10. Dick K.A., Deppert K., Samuelson L., and Seifert W. J. Crystal Growth 298 (2007) 631
11. Wu Y., Cui Y., Huynh L., Barrelet C.J., Bell D.C., and Lieber C.M. Nano Lett. 4 (2004) 433
12. ASM International.
13. Xu Q., Hsu J.W.P., Fitzgerald E.A., Kuo J.M., Xie Y.H., and Silverman P.J. J. Electron. Mater. 25 (1996) 1009
14. M. Groenert, Thesis, MIT (2002).
15. Fitzgerald E.A., Kuo J.M., Xie Y.-H., and Silverman P.J. Appl. Phys. Lett. 64 (1994) 733
16. Wright S.L., Kroemer H., and Inada M. J. Appl. Phys. 55 (1984) 2916
17. Bi W.G., Mei X.B., and Tu C.W. J. Crystal Growth 164 (1996) 256
18. Yu M.L., and Meyerson B.S. J. Vac. Sci. Technol. A 2 (1984) 446
19. Eversteyn F.C., and Put B.H. J. Electrochem. Soc. 120 (1973) 106
20. ASM International.